Báo cáo hóa học: " n-Type Doping of Vapor–Liquid–Solid Grown GaAs Nanowires" ppt

... the suc- cessful n-type doping of VLS -grown GaAs nanowires with high charge carrier densities using TESn. Using TESn as dopant precursor implies a n-type conductivity of the GaAs nanowires. We ... demon- strated supplying DEZn during MOVPE growth [18], but a study on n-type doping is pending. In this lett er, n-type doping of GaAs nanowires grown by VLS using two...

Ngày tải lên: 21/06/2014, 11:20

... transplantation with an excellent safety profile. The finding of delivered cells over a small proportion of the luminal surface suggests direct but incomplete partic- ipation of CD34+ cells in endothelial ... First, the use of autologous animal products fails to address the specific efficacy of the intended human product. Second, immu- nophenotyping of animal products may be limit...

Ngày tải lên: 18/06/2014, 15:20

... greater than the cut-off of the control mean plus 3 SD were color-coded to signify the relative number of standard deviations above these cut-off values. Analysis of con- trols revealed that 5 of the normal ... 8:97 http://www.translational-medicine.com/content/8/1/97 Page 6 of 9 sepsis (Figure 1F). Testing for anti-AQP-4 antibodies revealed that 9% (3/35) of the ARDS and 15% (2/1...

Ngày tải lên: 18/06/2014, 16:20

... acquisition of data, analysis and interpretation of data, and drafted the man- uscript. MDM contributed to the study design, acquisition of data, analysis and interpretation of data, and revision of the ... Journal Of Occupa- tional Rehabilitation 2003, 13:79-89. 5. Barlow A, Clarke R, Johnson N, Seabourne B, Thomas D, Gal J: Effect of massage of the hamstring muscle group on...

Ngày tải lên: 20/06/2014, 00:20

... velocity of 25 m/s, a hold time of 15 ps, and a temperature of 300 K. Ther- mal equilibrium was achieved before the indentation to * Correspondence: fang.tehua@msa.hinet.net 1 Department of Mechanical ... a velocity of 25 m/s and a packing time of 15 ps. At lower temperature, a higher force was required to achieve a given indentation depth due to the higher hardness of Figure 1...

Ngày tải lên: 21/06/2014, 01:20

... distribution of randomly nucleated islands on a flat Si(100) surface without any pit patterning, as a function of the distance from the stripe in case of annealing at 600°C. c Scatter plot of the volume of ... quantitative validation of our educated guess about the factors governing the ordered growth process in pres- ence of pit patterning can be obtained by correlating the volu...

Ngày tải lên: 21/06/2014, 08:20

... miniaturize. In addition, according to the late tendency of development and production of products using Bi 2 Te 3 thermoelectric devices, supplies of Bi 2 Te 3 are predicted to face shortage soon. ... SOI wafer is boron doped with a resistivity of 13.5–22.5 X cm, and the corresponding doping concentration is about 1.0 9 10 15 cm -3 . The thickness of the SOI and buried oxide (BOX...

Ngày tải lên: 21/06/2014, 17:20

... c, d denoted the out -of- plane hy steresis loops of the sa mples grown on the AAO templates with pore diameters of around 185, 95, and 40 nm, respectively. For the samples grown on the AAO tem- plates, ... yucc@nuk.edu.tw 1 Department of Applied Physics, National University of Kaohsiung, Kaohsiung 811, Taiwan, Republic of China Full list of author information is available at...

Ngày tải lên: 21/06/2014, 17:20

... growth, a sheet of Sb atoms are deposited on Ga-rich GaAs surface before starting the growth of bulk GaSb epitaxial layer. If Sb is deposited on As-rich GaAs surface instead of Ga-rich GaAs surface, ... Lett (2009) 4:1458–1462 123 spontaneously by the formation of the IMF at the GaSb/ GaAs interface. Further proof of spontaneous relaxation of IMF-based samples is provided...

Ngày tải lên: 22/06/2014, 00:20