... rate of InAs was deduced to be 0.013 ML/s and theQD formation was confirmed on GaAs (100) surface. After15 s of growth interruption, a 20 nm GaAs capping layer was grown on top of the QDs layer ... buffer layer was grown at 600 °Cfollowed by a reduction of the substrate temperature to530 °C for the growth of 1.6 monolayer (ML) of InAs. Byin situ reflection high-energy electron diffraction, ... mentioned earlier, differentoriented substrate surfaces are characterized by differentchemical potentials thus affecting the kinetics of adsorp-tion, migration, desorption, reconstruction, ...