Advanced Microwave Circuits and Systems Part 16 pptx

... ripple (f(t)) can be determined. Advanced Microwave Circuits and Systems4 54 7. References Andersen J.B. and Vaughan R.G. (2003) Transmitting, receiving and Scattering Properties of Antennas, ... 20 2 4 6 8 10 12 14 16 18 20 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 X Y 5 10 15 20 2 4 6 8 10 12 14 16 18 20 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 Advanced Microwave Circuits and S...

Ngày tải lên: 21/06/2014, 06:20

... technology. Advanced Microwave Circuits and Systems4 42 complex reflection coefficient as defined in (6) due to open, short and load conditions for    and   . The incident and backscatter ... capacitance to limit simulation time) Advanced Microwave Circuits and Systems4 18 Fig. 10. Equivalent Circuit of a Transponder maximum possible distance between reader and trans...

Ngày tải lên: 20/06/2014, 11:20

... model- order reduction for rf /microwave ics and systems, Microwave Theory and Techniques, IEEE Transactions on 52(9): 2274–2284. Advanced Microwave Circuits and Systems1 56 0 0.025 0.05 0.075 ... test, its compressi on points and the corresponding power series model identified using the development presented in sec- Advanced Microwave Circuits and Systems1 60 2. General combinin...

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... frequency bands of #1: 0.05-1 GHz, #2: 1-2 GHz, and Advanced Microwave Circuits and Systems2 16 Fig. 3 presents the variant of generation for the band of 0.20.5 mm where the radiation is scattered ... #2: 1-2 GHz, and Advanced Microwave Circuits and Systems2 30 Fig. 3. Micrograph of the realized 10-GHz highly linear push-pull buffer pair. achieved with this inductorless broadband c...

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... 2(a) and (b), the scattering antenna should scatter back the same power irrespective of the type of lossless termination (including open and short), as Advanced Microwave Circuits and Systems4 32 ... causes a higher voltage ul and a higher Advanced Microwave Circuits and Systems4 36 transistors in the main power rectifier stack. The minimum required input voltage and the effici...

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... Main device maximum allowable output current I Max and its selected bias point. Advanced Microwave Circuits and Systems1 18 Now, from (15) and replacing the respective Fourier expressions, it ... 0.5 OBO = 6dB  = 0.4 OBO = 8dB Fig. 16. R 3,ratio as function of  for different OBO () values. Advanced Microwave Circuits and Systems1 24 4. Advanced DPA Design In the previ...

Ngày tải lên: 20/06/2014, 11:20

... t SiN ranging from 30 to 50nm and L FP ranging from 0.4 and 0.6m. Advanced Microwave Circuits and Systems1 98 Asano K., Miyoshi Y., Ishikura K., Nashimoto Y., Kuzuhara M., and Mizuta M. (1998) “Novel ... plated devices are obtained with t SiN ranging from 30 to 50nm and L FP ranging from 0.4 and 0.6m. Advanced Microwave Circuits and Systems1 78 pointing out that beside inc...

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... consumption and phase noise. Fig. 8. The output voltage swing with switching tail transistors Advanced Microwave Circuits and Systems2 16 Fig. 3 presents the variant of generation for the band of ... push-pull buffer pair is shown in Fig. 3, and the standard 150-µm pitch gsgsg probe pad layout depicted underlines the compact size Advanced Microwave Circuits and Systems2 32 Table 1...

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... phones or other handheld wireless products. The choice 13 Advanced Microwave Circuits and Systems2 66 good dielectric material should have a high dielectric constant, a high band gap to limit ... the energies stored in the magnetic and electric fields and lost can be expresses in eqation (3.8 to 3.10) respectively. Advanced Microwave Circuits and Systems2 68 size (Wu J. C. & Z...

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... isolation between ports 1 and 4, and 2 and 3 is greater than 19 dB in the 3.1 to 10.6 GHz frequency band. In the same band, the coupling between ports 1 and 3 and 2 and 4 is 3 dB with a ±1 dB ... the reference to Port 1 and 2 Advanced Microwave Circuits and Systems3 54 The simulated magnitudes of q 4 , q 5 , q 6 and q 7 are 2.3 ± 0.9, 1.9 ± 0.8, 2.1 ± 0.6 and 2.5 ± 0....

Ngày tải lên: 20/06/2014, 11:20