Báo cáo hóa học: " Valence band offset of wurtzite InN/SrTiO3 heterojunction measured by x-ray photoelectron spectroscopy" ppt

... devices. Abbreviations CBO: conduction band offset; CLs: core levels; MOCVD: metal-organic chemical vapor deposition; VBM: valence band maximum; VBO: valence band offset; XPS: X-ray photoelectron spectroscopy. Acknowledgements This ... HB, Liu XL, Yang SY, Wei HY, Zhu QS, Wang ZG: Determination of the valence band offset of wurtzite InN/ZnO heterojunction by x...

Ngày tải lên: 21/06/2014, 04:20

... heterojunction band offsets by x-ray photoelectron spectroscopy. Appl Phys Lett 2006, 88:042113. 8. Wu CL, Shen CH, Gwo S: Valence band offset of wurtzite InN/AlN heterojunction determined by photoelectron ... Zhanguo Wang Abstract The valence band offset (VBO) of wurtzite indium nitride/strontium titanate (InN/SrTiO 3 ) heterojunction has been directly...

Ngày tải lên: 21/06/2014, 05:20

... conduction band; ST, shallow trap; 4 T 1 and 6 A 1 , manganese levels; VB, valence band; V s , sulfur vacancy. Figure 6 Absorption spectra of pure MB dye. Figure 7 Photodegradation of MB dye with ... J Catal 2003, 216:505. 4. Hoffmann AJ, Mills G, Yee H, Hoffmann MR: Q-sized cadmium sulphide: synthesis, characterization and efficiency of photoinitation of polymerization of sever...

Ngày tải lên: 21/06/2014, 02:20

... rats, 5 out of 5 of Wistar Furth, 2 out of 4 of surviving Lewis and 2 out of 2 of the surviving spontaneous hypertensive rats had apoptotic osteocytes in trabeculae, whereas none of the Fisher ... with the long-term goal of modifying regimens to decrease the risk of adverse effects of therapy. Despite the strong association of GC administration with ON, the role of...

Ngày tải lên: 20/06/2014, 07:20

... compliance by calculating the number of classes or minutes attended divided by the number offered. Reporting compliance is critical as it allows reviewers to calculate the "dose" of the ... bands). Progression was deter- mined by changes in number of repetitions (reps), sets or increasing load (e.g., progressive 8–20 reps, 4–6 sets, and load increased by 40–80%) or pro...

Ngày tải lên: 20/06/2014, 16:20

... results of MC detection in the ROIs using the methodology proposed in this paper. Table 1 Number of patterns assigned to MCs and NT Class Number of patterns by k-means Number of patterns by sub- segmentation ... with PFCM NT 652,965 652,716 MCs 2,395 2,644 Table 2 Results of balancing Class Number of patterns by k-means Number of patterns by sub- segmentation with PFCM N...

Ngày tải lên: 20/06/2014, 22:20

... 2011:41 http://www.fixedpointtheoryandapplications.com/content/2011/1/41 Page 2 of 11 for all x, y Î X with 0 ≤ h<1, the existence and uniqueness of a common fixed point follows from [14]. Howev er, if X is non-symmetric G-metric space, then by the defini- tion of ... safeer@qu.edu. qa 2 Department of Mathematics, Statistics and Physics, Qatar University, Doha 2713, Qatar Full li...

Ngày tải lên: 21/06/2014, 00:20

... all use a model of the order of 5. The number of peaks in the ODF PAD is lim- ited to 20. These totals were calculated by counting the number of floating-point operations required by each ODF to process ... mea- sured at 44.1 kHz, we have 8 6.133 frames of audio per second, and so the number of operations required by each ODF per frame of audio was multiplied by 86.133 t...

Ngày tải lên: 21/06/2014, 00:20

... then given by the surface fraction-weighted average of the cosines of water contact angles on a smooth alumin a Figure 1 SEM images of alumina surfaces prepared by anodic oxidation of Al. (a) ... initial reaction of HMDS with the alumina surface occurs by the dissociative che- misorption of HMDS via reaction of coordinatively unsaturated Al + and O-sites. Subsequent reacti...

Ngày tải lên: 21/06/2014, 01:20

... ca se, the loss of Ge is partial, since RBS spectra of the samples reveal the pre- sence of Ge atoms in the layers near the interface film- substrate. The lack of the presence of for any Raman feature ... disappearance of the Raman signal. The observed absence of Si-Ge and Si-Si Raman peaks for the anne aled samples could be explained by the low amount of Si used during the...

Ngày tải lên: 21/06/2014, 04:20