Báo cáo hóa học: " Combinatorial growth of Si nanoribbons" pptx

Báo cáo hóa học: " Combinatorial growth of Si nanoribbons" pptx

Báo cáo hóa học: " Combinatorial growth of Si nanoribbons" pptx

... growth of Si ribbons, which are very similar morphology to our Si NRs though thesizeweremuchbigger(widthof30-150μmand length of 1-20 mm) [20]. Here, {111} twin creates favor- able nucleation sites ... cross-section image of the as-grown Si NRs. The right side of the TEM image in Figure 4a is the part of the basal nanowire, whereas the other side is the part of the saw-like...
Ngày tải lên : 21/06/2014, 01:20
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báo cáo hóa học: " Catalytic growth of ZnO nanostructures by r.f. magnetron sputtering" docx

báo cáo hóa học: " Catalytic growth of ZnO nanostructures by r.f. magnetron sputtering" docx

... epitaxial growth of vertically well- aligned ZnO nanorods has been also reported in [3]. Another kind of nanowires, Si a nd GaAs, are grown by vapour-liquid -solid deposition (VLS) using gold ... amorphous’. Conclusions In summary, experiments addressing a possible cata- lytic effect of gold on ZnO growth by r.f. magnetron sputtering under UHV conditions are presented. A moderate...
Ngày tải lên : 21/06/2014, 02:20
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Báo cáo hóa học: " Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy" docx

Báo cáo hóa học: " Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy" docx

... on the epitaxial growth. As the epitaxial growth of GaN on patterned Si or SiO 2 substrates, GaN nanocolumns are easily formed due to random nucleation [13,14]. Selec- tive area growth of GaN can produce ... optics devices by a combination of the epitaxial growth, etching of GaN and silicon micromachining. Compared to other growth techniques, the selective growth of GaN...
Ngày tải lên : 21/06/2014, 05:20
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Báo cáo hóa học: " Morphology Analysis of Si Island Arrays on Si(001)" doc

Báo cáo hóa học: " Morphology Analysis of Si Island Arrays on Si(001)" doc

... images measured in two types of samples. Both of them correspond to Si layers of the same nominal deposited thickness (t = 5 nm), grown by MBE on B-doped singular Si( 001) single crystals, for which ... population of facets as the ratio of their intensity maxima. Results and Discussion Figure 1 shows AFM images of the surface morphology of Si layers (t = 5 nm) grown at subs...
Ngày tải lên : 21/06/2014, 08:20
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báo cáo hóa học:" Initial Growth of Single-Crystalline Nanowires: From 3D Nucleation to 2D Growth" docx

báo cáo hóa học:" Initial Growth of Single-Crystalline Nanowires: From 3D Nucleation to 2D Growth" docx

... several nanocrystals and growth in size, d preferred growth of a single crystal along a preferential plane in a 2D growth mode Nanoscale Res Lett (2010) 5:1057–1062 1061 123 NANO EXPRESS Initial Growth of Single-Crystalline ... National University of Singapore, Singapore, Singapore 123 Nanoscale Res Lett (2010) 5:1057–1062 DOI 10.1007/s11671-010-9602-5 orientation dependence of...
Ngày tải lên : 21/06/2014, 18:20
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Báo cáo hóa học: " Transplacental transmission of Human Papillomavirus" pptx

Báo cáo hóa học: " Transplacental transmission of Human Papillomavirus" pptx

... a specific sexual behavior of exposing themselves to an ensemble of different types of HPV, or else the preexist- ence of a type of HPV could make it easier to acquire a new type of virus through an ... squamous intraepithelial lesions, HGSIL – high-grade squamous intraepithelial lesions), site of HPV lesion (cervical, vagi- nal, vulvar and perineal), type of HPV infection (si...
Ngày tải lên : 20/06/2014, 01:20
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báo cáo hóa học:" Histomorphological study of the spinal growth plates from the convex side and the concave side in adolescent idiopathic scoliosis" potx

báo cáo hóa học:" Histomorphological study of the spinal growth plates from the convex side and the concave side in adolescent idiopathic scoliosis" potx

... car- tilaginous growth plates on the convex side of the curve in the course of performing unilateral growth- arrest opera- tions in idiopathic scoliosis. These biopsies showed con- fusion and retardation of ... a significant difference of histological grades between two sides at the apex of the curve indicates that a significant difference of growth activity between the con-...
Ngày tải lên : 20/06/2014, 00:20
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báo cáo hóa học:" Critical aspects of substrate nanopatterning for the ordered growth of GaN nanocolumns" pdf

báo cáo hóa học:" Critical aspects of substrate nanopatterning for the ordered growth of GaN nanocolumns" pdf

... resist residues over the mask or inside the holes, due to the high aspect ratio of the patterns and to the finite dimensions of the AFM tip. In 50% of the cases, neither SEM nor AFM analysis ... Ti mask with resist residues (whiter spots). Right side: (b) top view and (d) side view SEM images of GaN NCs grown by PA- MBE using these masks, showing ordered columns grown inside the ho...
Ngày tải lên : 20/06/2014, 04:20
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báo cáo hóa học:" Psychometric properties of two measures of psychological well-being in adult growth hormone deficiency" pot

báo cáo hóa học:" Psychometric properties of two measures of psychological well-being in adult growth hormone deficiency" pot

... intended on the six factors (Table 3). Factor 1 consisted of vitality items, with one general health item (Q17), and Factor 2 consisted of self-control, positive well-being and depression items. Factor ... effects of withdrawal of growth hor- mone therapy from adults with growth hormone deficiency. Clinical Endocrinology 2003, 59(4):467-475. 34. McMillan CV: A psychometric evaluat...
Ngày tải lên : 20/06/2014, 15:20
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