... measurements were done by YL. CKC was involved with the MOCVD growth of epi-GaAs. Simulation of C-V characteristics and Ge diffusion was done by AD and SC. CM and CKM were involved with the electrical ... epitaxial growth of GaAs on Ge by MOCVD. J Cryst Growth 2006, 297:204. 13. Dalapati GK, Chattopadhyay S, Kwa KSK, Olsen SH, Tsang YL, Agaiby R, Dobrosz P, Bull SJ, O’Neill AG: Impact of strained-Si ... Figure 2. ToF-SIMS profiles of Ga, As, Al, and Ge atom concentration. These are the profiles for the epitaxial GaAs layer grown at high temperature on a Ge substrate with and without the AlAs...