Ferroelectrics Material Aspects Part 10 potx
Ferroelectrics Material Aspects Part 10 potx
... 80 32 290
(100 kHz)
4.24 2
(100 kHz)
Egerton & Dillon,
1959
0.45 160 49 420
(100 kHz)
1.4
(100 kHz)
Jaeger & Egerton,
1962
0.32 107 264
(1 kHz)
4.09 Maeda et al., 2 010
0.40 ...
piezoelectric and dielectric properties.
Ferroelectrics – Material Aspects
316
Fig. 6. SEM images of KNN sintered samples at: a) 106 0, b) 108 0, c) 1100 and d) 1120°C for...
Ferroelectrics Material Aspects Part 1 potx
...
43.80
44.00
44.20
44.40
44.60
44.80
45.00
45.20
45.40
45.60
45.80
Frequency (Hz)
Dielectric constant (10
3
)
0
1
2
3
4
5
6
7
8
9
10
Quality factor (10
2
)
0 V
20 V
40 V
0 V
20 V
40 V
10
4
10
5
10
6
10
7
10
8
Fig. 13. Dielectric constant and quality ... It is well known that their
Sapphire (104 )
Sapphire(006)
Film
(
110
)
Film
(
111
)
/
2
directio
n
(a) (b)
(a)...
Ferroelectrics Material Aspects Part 4 potx
... crystal) 10. 34 ± 0.58 10. 82 ± 0.64 0.96 ± 0.04
0 (matrix) 10. 64 ± 0.62 10. 53 ± 0.58 1.01 ± 0.05
0.5 (single crystal) 10. 41 ± 0.44 10. 39 ± 0.41 0.99 ± 0.05
0.5 (matrix) 10. 48 ± 0.63 10. 42 ± ...
Ferroelectrics – Material Aspects
102
System Freq. (kHz) ε
Troom
tg δ
Troom
T
1
(°C)
T
2
(°C)
KNN s.c. [1 3 1]
this study
100 101 5 0.01 192 410
KNN s.c. [ 323 ]...
Ferroelectrics Material Aspects Part 12 potx
...
Ferroelectrics – Material Aspects
380
-6 -4 -2 0 2 4 6
-30
-20
-10
0
10
20
30
Polarization (C/cm
2
)
Electric field
(
V
)
-50 0 50 100 150 200
180
200
220
240
Dielectric ...
Ferroelectrics – Material Aspects
398
phases contained and also the distribution of the LiTaO
3
phase in the microstructure
(Vernacotola, 1994).
-10 0 10 20 30 40 50 60 70 80 90 100...
Ferroelectrics Material Aspects Part 2 pdf
... at 100 0°C for 4 h; (c) via CMO at
100 0°C for 4 h
Ferroelectrics – Material Aspects
40
(a)
(b)
(c)
(d)
Fig. 7. SEM micrographs of Bi
4
Ti
3
O
12
powders obtained via MSS at 100 0°C ... temperatures for 4 h: (a) 800°C; (b) 900°C; (c) 100 0°C; (d)
1100 °C(indexed peaks are those of Na
0.5
Bi
0.5
TiO
3
)
Ferroelectrics – Material Aspects
56
We have also...
Ferroelectrics Material Aspects Part 3 doc
... achieve (101 )
oriented BTO thin films on (100 ) oriented Fe
81
Ga
19
substrates. In this case, the growth
relationship would be BTO (100 )||Fe
81
Ga
19
( 110) , and BTO (101 )||Fe
81
Ga
19
(100 ).
We ... plane
M/Ms
H
dc
(Oe)
0 200 400 600 800 100 0
-10
0
10
20
30
40
50
60
70
80
Magnetostriction (ppm)
Magnetic Field(Oe)
(a)
(b)
Ferroelectrics – Material Aspects
60...
Ferroelectrics Material Aspects Part 5 pptx
... min)
10
2
10
3
10
4
10
5
25.0p
30.0p
35.0p
40.0p
ON stage
Vg hold at 0.75V
Capacitance (F)
Hold time (s)
3 hours
Pt/SBT (480 nm)/ SiO
2
(7 nm)/Si
OFF stage
10
2
10
3
10
4
10
5
10
6
10
7
5.0p
10. 0p
15.0p
20.0p
25.0p
ON ... structures and demonstrated a novel method to improve their retention properties.
10
0
10
1
10
2
10
3
10
4
10
5
10
6
10
7
5.0p...
Ferroelectrics Material Aspects Part 6 ppt
... interaction forces between particles.
Commonly used doping nanoparticles include ferromagnetic nanoparticles, metallic
nanoparticles, inorganic nanoparticles, and ferroelectric nanoparticles. In the ... Ba
0.6
Sr
0.4
TiO
3
Films
for Property –Specific Device Applications. Integrated Ferroelectrics Vol. 100 , 36-47.
Ferroelectrics – Material Aspects
186
or
42 33
2
11
22
4...
Ferroelectrics Material Aspects Part 7 ppt
... result
of material selection, the ordinary refractive index,
n
o
LC
, of the selected LC is almost identical
Ferroelectrics – Material Aspects
224
10 20 30 40 50 60 70 80 90
311
310
221
220
211
210
200
111
110
100
... Ba
0.6
Sr
0.4
TiO
3
(Xu et al. 2009).
10 20 30 40 50 60 70 80 90
222
311
310
221
220
211
210
200
111
110
100
(f)
(e)
(d)
(c)
(b)
(a)
2(deg....
Ferroelectrics Material Aspects Part 8 ppt
... microwave
method at 180
o
C/1h.
Ferroelectrics – Material Aspects
250
(2 010) . Defect-Mediated Polarization Switching in Ferroelectrics and Related
Materials: From Mesoscopic Mechanisms ... transition at T
N
=75 K and a ferroelectric transition at T
C
=913
Ferroelectrics – Material Aspects
254
The organic part is eliminated at low temperatures forming reactive o...