Ferroelectrics Material Aspects Part 10 potx

... 80 32 290 (100 kHz) 4.24 2 (100 kHz) Egerton & Dillon, 1959 0.45 160 49 420 (100 kHz) 1.4 (100 kHz) Jaeger & Egerton, 1962 0.32 107 264 (1 kHz) 4.09 Maeda et al., 2 010 0.40 ... piezoelectric and dielectric properties. Ferroelectrics – Material Aspects 316 Fig. 6. SEM images of KNN sintered samples at: a) 106 0, b) 108 0, c) 1100 and d) 1120°C for...

Ngày tải lên: 19/06/2014, 13:20

... 43.80 44.00 44.20 44.40 44.60 44.80 45.00 45.20 45.40 45.60 45.80 Frequency (Hz) Dielectric constant (10 3 ) 0 1 2 3 4 5 6 7 8 9 10 Quality factor (10 2 ) 0 V 20 V 40 V 0 V 20 V 40 V 10 4 10 5 10 6 10 7 10 8 Fig. 13. Dielectric constant and quality ... It is well known that their Sapphire (104 ) Sapphire(006) Film ( 110 ) Film ( 111 )  / 2  directio n (a) (b) (a)...

Ngày tải lên: 19/06/2014, 13:20

... crystal) 10. 34 ± 0.58 10. 82 ± 0.64 0.96 ± 0.04 0 (matrix) 10. 64 ± 0.62 10. 53 ± 0.58 1.01 ± 0.05 0.5 (single crystal) 10. 41 ± 0.44 10. 39 ± 0.41 0.99 ± 0.05 0.5 (matrix) 10. 48 ± 0.63 10. 42 ± ... Ferroelectrics – Material Aspects 102 System Freq. (kHz) ε Troom tg δ Troom T 1 (°C) T 2 (°C) KNN s.c. [1 3 1] this study 100 101 5 0.01 192 410 KNN s.c. [ 323 ]...

Ngày tải lên: 19/06/2014, 13:20

... Ferroelectrics – Material Aspects 380 -6 -4 -2 0 2 4 6 -30 -20 -10 0 10 20 30 Polarization (C/cm 2 ) Electric field ( V ) -50 0 50 100 150 200 180 200 220 240 Dielectric ... Ferroelectrics – Material Aspects 398 phases contained and also the distribution of the LiTaO 3 phase in the microstructure (Vernacotola, 1994). -10 0 10 20 30 40 50 60 70 80 90 100...

Ngày tải lên: 19/06/2014, 13:20

... at 100 0°C for 4 h; (c) via CMO at 100 0°C for 4 h Ferroelectrics – Material Aspects 40 (a) (b) (c) (d) Fig. 7. SEM micrographs of Bi 4 Ti 3 O 12 powders obtained via MSS at 100 0°C ... temperatures for 4 h: (a) 800°C; (b) 900°C; (c) 100 0°C; (d) 1100 °C(indexed peaks are those of Na 0.5 Bi 0.5 TiO 3 ) Ferroelectrics – Material Aspects 56 We have also...

Ngày tải lên: 19/06/2014, 13:20

... achieve (101 ) oriented BTO thin films on (100 ) oriented Fe 81 Ga 19 substrates. In this case, the growth relationship would be BTO (100 )||Fe 81 Ga 19 ( 110) , and BTO (101 )||Fe 81 Ga 19 (100 ). We ... plane M/Ms H dc (Oe) 0 200 400 600 800 100 0 -10 0 10 20 30 40 50 60 70 80 Magnetostriction (ppm) Magnetic Field(Oe) (a) (b) Ferroelectrics – Material Aspects 60...

Ngày tải lên: 19/06/2014, 13:20

... min) 10 2 10 3 10 4 10 5 25.0p 30.0p 35.0p 40.0p ON stage Vg hold at 0.75V Capacitance (F) Hold time (s) 3 hours Pt/SBT (480 nm)/ SiO 2 (7 nm)/Si OFF stage 10 2 10 3 10 4 10 5 10 6 10 7 5.0p 10. 0p 15.0p 20.0p 25.0p ON ... structures and demonstrated a novel method to improve their retention properties. 10 0 10 1 10 2 10 3 10 4 10 5 10 6 10 7 5.0p...

Ngày tải lên: 19/06/2014, 13:20

... interaction forces between particles. Commonly used doping nanoparticles include ferromagnetic nanoparticles, metallic nanoparticles, inorganic nanoparticles, and ferroelectric nanoparticles. In the ... Ba 0.6 Sr 0.4 TiO 3 Films for Property –Specific Device Applications. Integrated Ferroelectrics Vol. 100 , 36-47. Ferroelectrics – Material Aspects 186 or 42 33 2 11 22 4...

Ngày tải lên: 19/06/2014, 13:20

... result of material selection, the ordinary refractive index, n o LC , of the selected LC is almost identical Ferroelectrics – Material Aspects 224 10 20 30 40 50 60 70 80 90 311 310 221 220 211 210 200 111 110 100 ... Ba 0.6 Sr 0.4 TiO 3 (Xu et al. 2009). 10 20 30 40 50 60 70 80 90 222 311 310 221 220 211 210 200 111 110 100 (f) (e) (d) (c) (b) (a) 2(deg....

Ngày tải lên: 19/06/2014, 13:20

... microwave method at 180 o C/1h. Ferroelectrics – Material Aspects 250 (2 010) . Defect-Mediated Polarization Switching in Ferroelectrics and Related Materials: From Mesoscopic Mechanisms ... transition at T N =75 K and a ferroelectric transition at T C =913 Ferroelectrics – Material Aspects 254 The organic part is eliminated at low temperatures forming reactive o...

Ngày tải lên: 19/06/2014, 13:20