Optoelectronics Devices and Applications Part 9 docx

... No.1, (March 199 5), pp. ( 19- 25). ISSN 0030-4018. Yariv, A. & Pochi, Y. ( 198 4). Optical Waves in Crystals, Wiley, ISBN 0-471- 091 42-1, USA. Optoelectronics – Devices and Applications ... F., Willing S., Worland D.P. & Yao H. C. ( 199 2). High Power Diode Laser Arrays. IEEE J. of Quantum Electronics, Vol.28, No.4, (April 20 09) , pp, 95 2- 96 5, ISSN 0018 -91 97...

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... US-patent 5 297 181, can be used. 2 Society of Motion Picture and Television Engineers, http://www.smpte.org 372 Optoelectronics – Devices and Applications On Fault-Tolerance and Bandwidth Consumption ... injection (Zegaoui et al., 20 09; Bennett et al., 199 0) or by the electro-optic effect (Cao et al., 20 09; Agrawal et al., 199 5), within III-V semiconductors, such as GaAs-ba...

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... 193 5- 193 8. Dubard, J., Smirl, A.L., Cui, A.G., Valley, G.C. & Boggess, T.F. ( 198 9). Beam amplification by transient energy transfer in GaAs and Si, Phys. Status Solidi (b) Vol. 150: 91 3 -91 9. Gaa, ... ( 199 3). Introduction to Photorefractive Nonlinear Optics, John Wiley & Sons, New York. Sze, S.M. ( 196 9). Physics of Semiconductor Devices, Wiley, New York. 540 Optoelectro...

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... to find new methods in Optoelectronics – Devices and Applications 604 resonances and electromagnetic field enhancements in individual metal nanoparticles and particle assemblies (Prasad, ... Plasmonic nanoparticles have tremendous technological importance and found applications in therapy and imaging. Beyond biosensing, plasmonic nanoparticles have further applicat...

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... the naked eye and it is a function of the thickness of the emissive layer. Optoelectronics – Devices and Applications 22 Y. Cao, G. Yu, C. Zhang, R. Menon, and A.J. Heeger( 199 7), Polymer ... spots and consequent decay of device luminance were the reported (P.E.Burrows et al, 199 4) phenomena in degradation studies of organic luminescent devices. Optoelectronics –...

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... ZA20 09/ 090 15, ZA20 09/ 08833, ZA20 09/ 04508) ; PCT Patent Application PCT/ZA2010/00033 of 2010 (Priority patents: ZA 2008/10 89, ZA20 09/ 045 09, ZA20 09/ 04665, ZA20 09/ 04666, ZA20 09/ 052 49, ZA20 09/ 08834, ... 0.0 89 m ∗ so /m o 0.15 0.16 Table 2. Parameters of GaAs (de Walle ( 198 9)), InAs (de Walle ( 198 9)), InP and GaN (de Walle ( 198 9); Fan et al. ( 199 6); Kim et al. (...

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... Physics Part II, Vol.35, ( 199 6), pp.L74. Peters, D. ( 199 0). Journal of Crystal Growth, Vol.104, ( 199 0), pp.411. Porowski, S. ( 199 9). MRS Internet Journal of Nitride Semiconductor, Res. 4S1, ( 199 9), ... different parts may distort the rib cage (Crawford et al., 198 3; McCool et al., 198 5; Chihara et al., 199 6; Ward et al., 199 2; Kenyon et al., 199 7). By contrast, recent st...

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... indirect bandgap problem in Si ( Buda. et al, 199 2); (f) use of silicon nano-crystals ( Pavesi, et al. 2000; Walson ,et al 199 3) ; (g) silicon/insulator superlattice ( Lu et al. 199 5) and (h) ... development of quasi-particle GW approximation method (Hybertsen & Louie. 198 6 ; Aryasetiawan & Gunnarsson. 199 8; Aulbur et al.2000 ) and sX-LDA method (Seidl , et al. 199 6), t...

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... Busch, 199 9]. Optoelectronics – Devices and Applications 170 Lagalante, A.F. ( 199 9). Atomic Absorption Spectroscopy: A Tutorial Review, Applied Spectroscopy Reviews , Vol. 34(3), pp.173–1 89 Li, ... of numerous movement disorders and neurological diseases such as stroke, motor neurone disease and others (Kautz and Brown 199 8; Moreland, Thomson et al. 199 8). Briefly...

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... v 1 -v 2 v 3 -v 2 v 1 Kleiner et al. ( 199 9) 3 μm v 3 Guelachvili et al. ( 198 9) 2v 4 4 μm 3v 2 /v 2 +v 4 Kleiner et al. ( 199 5) v 1 +v 2 1. 89 2. 09 μm v 2 +v 3 Urban et al. ( 198 9) v 2 +2 v 4 Table 1. The rotational-vibrational ... proposals, Prof. K. Iga (Iga et al., 198 8) suggested the best solution of 228 Optoelectronics – Devices and Applications Optoelectronics – Devic...

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