Optoelectronics Devices and Applications Part 2 potx

... ZA2009/04665, ZA2009/04666, ZA2009/0 524 9, ZA2009/08834, ZA2009/0915), ZA2010/08579, ZA2011/03 826 ; and PCT Patent Application PCT/ZA2010/00031 of 20 10” (Priority patents: ZA 20 10/ 020 21, ZA 20 10/0 020 1, ... PCT/ZA2010/000 32 of 20 10, (Priority patents: ZA2010/0 020 0, ZA2009/09015, ZA2009/08833, ZA2009/04508) ; PCT Patent Application PCT/ZA2010/00033 of 20 10 (Priority p...

Ngày tải lên: 19/06/2014, 11:20

... consisting in a tunnel junction and a metamorphic mirror (Fig. 7). A 23 2 Optoelectronics – Devices and Applications Optoelectronics – Devices and Applications 25 8 Although other device structures ... structures and their effect on resistance, Applied Physics Letters 61(15): 1 820 –1 822 . 25 2 Optoelectronics – Devices and Applications 8 Will-be-set-by-IN-TEC...

Ngày tải lên: 19/06/2014, 11:20

... 1534.0 1534 .2 1534.4 -0 .26 -0 .24 -0 .22 -0 .20 -0.18 -0.16 -0.14 Transmittance(dB) Wavelength(nm) 蚓 32. 2 蚓 29 .3 蚓 32 Fig. 12. Wavelength lock. Optoelectronics – Devices and Applications ... stress tensor and is a measure of pressure. 422 Optoelectronics – Devices and Applications Optoelectronics – Devices and Applications 416 we obtain 01 9...

Ngày tải lên: 19/06/2014, 11:20

... Res., 2, 829 - 843, ISSN 1998-0 124 . Zouhdi, S.; Sihvola, A. & Vinogradov, A. P. (20 09). Metamaterials and Plasmonics: Fundamentals, Modeling, Applications. Springer, ISBN 978-1-4 020 -9405-7, ... Optoelectronics – Devices and Applications 630 Zhiyong, F.; Ruebusch, D. J.; Rathore, A. A.; Kapadia, R.; Ergen, O.; Leu, P. W. & Javey, A. (20 09). Challenges and Pr...

Ngày tải lên: 19/06/2014, 11:20

... visible to the naked eye and it is a function of the thickness of the emissive layer. Optoelectronics – Devices and Applications 22 Y. Cao, G. Yu, C. Zhang, R. Menon, and A.J. Heeger(1997), ... Huang Part 2 Optoelectronic Sensors 129 Chapter 7 Coupling MEA Recordings and Optical Stimulation: New Optoelectronic Biosensors 131 Diego Ghezzi OPTOELECTRONICS – DEVICE...

Ngày tải lên: 19/06/2014, 11:20

... Growth 195: 416– 420 . 76 Optoelectronics – Devices and Applications Optoelectronics – Devices and Applications 92 Gilbert, R. Auchincloss, JH. Brodsky, J. & Boden, W. (19 72) . Changes in ... UAE might be associated with Optoelectronics – Devices and Applications 82 2 .2 Compartmental volume measurements Volumes of the different chest wall compartmen...

Ngày tải lên: 19/06/2014, 11:20

... Si 10 .26 20 . 52 Sn 0. 125 Si 0.875 /Si (001) 10.49 20 . 92 Sn 0 .25 Si 0.75 /Si (001) 10,58 21 .30 Sn 0.5 Si 0.5 /Si (001) 10.79 21 .90 Ge 0. 125 Si 0.875 /Si (001) 10.36 20 .71 Ge 0 .25 Si 0.75 /Si ... length and Optoelectronics – Devices and Applications 120 Fig. 5(a). Band structure of Ge x Si 1-x / Si (001) superlattices. (a)x=0. 125...

Ngày tải lên: 19/06/2014, 11:20

... Neuroimage 8(3): 22 9- 23 9. Attwell, D. and C. Iadecola (20 02) . "The neural basis of functional brain imaging signals." Trends Neurosci 25 ( 12) : 621 - 625 . Basmajian, J. V. and C. J. De ... consists of PMT, preamplifier and ADC, and can be described by the formula   2 2 22 sp p f adc adc fn nadc pmt PS G R S N Rf V        , ( 32) where 2...

Ngày tải lên: 19/06/2014, 11:20

... 2v 2 /v 4 Cottaz et al. (20 00) 5–8 μm 3v 2 -v 2 v 2 +v 4 -v 2 Cottaz et al. (20 01) 4v 2 -v 2 4.00 μm v 1 -v 2 v 3 -v 2 v 1 Kleiner et al. (1999) 3 μm v 3 Guelachvili et al. (1989) 2v 4 4 μm 3v 2 /v 2 +v 4 Kleiner ... (see Fig. 2) . After two years of proposals, Prof. K. Iga (Iga et al., 1988) suggested the best solution of 22 8 Optoelectronics – Devices and Ap...

Ngày tải lên: 19/06/2014, 11:20

... [Å] A SQW L=150Å M 21 2 /e 2 [Å 2 ] 0 20 406080100 120 10 20 30 40 50 1000 20 00 3000 4000 5000 L c L c E tr [meV]  0 [Å] B GQW L=150Å M 21 2 /e 2 [Å 2 ] 0 20 40 60 80 100 120 10 20 30 40 50 60 1000 20 00 3000 4000 5000 L c L c E tr ... using the replacement   2 0 22 22 22 0 0 111 ,, 1 eh e h eh eh e Uzz d zz               ...

Ngày tải lên: 19/06/2014, 11:20