Optoelectronics Devices and Applications Part 1 pdf

... DEVICES AND APPLICATIONS Edited by Padmanabhan Predeep Organic Light Emitting Diodes: Device Physics and Effect of Ambience on Performance Parameters 17 10 10 0 1k 10 k 10 0k 1M 1k 10 k 10 0k ... Physics and Effect of Ambience on Performance Parameters 15 Fig. 12 . Deducing equivalent circuit from impedance plots. Fig. 13 . Equivalent Circuit. 10...

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... C 0.0 01 7 10 5 1 10 5 0 .15 5 10 1 2 10 3 0.002 1. 1 10 6 3 10 5 0.2 1 10 1 7 10 2 0.003 1 10 6 5 10 5 0.3 2 10 0 1. 6 10 2 0.004 9 10 5 6 10 5 1 10 3 0.4 8 10 -1 4.0 10 1 0.006 ... 8 10 5 6.5 10 5 2 10 3 0.6 3 10 -1 1. 5 10 1 0.008 6 10 5 6 10 5 3 10 3 0.8 1 10 -1 6 0. 01 4 10 6 5 10 5 5 10 3 1 3 10 -2 2 0. 015...

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... -6. 31 b (eV) -1. 7 -1. 8 -1. 9 -1. 7 c 11 (GPa) 18 1 .1 83.29 293 10 .11 c 12 (GPa) 53.2 10 1 .1 159 5. 61 m ∗ e /m o 0.067 0.023 0.22 0.08 m ∗ hh /m o 0.5 0.4 0.8 0.6 m ∗ lh /m o 0.087 0.026 0 .19 0.089 m ∗ so /m o 0 .15 ... ZA2009/0 915 ), ZA2 010 /08579, ZA2 011 /03826; and PCT Patent Application PCT/ZA2 010 /000 31 of 2 010 ” (Priority patents: ZA 2 010 /020 21, ZA 2 010...

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... O Heavy metals (Ni, Cr, etc.) Ga-face 2 x 10 18 cm -3 7 x 10 18 cm -3 10 15 ~10 17 cm -3 N-face 2 x 10 16 cm -3 2 x 10 19 cm -3 10 15 ~10 16 cm -3 Table 2. Example of impurity concentrations ... Crystal Growth 19 5: 416 –420. 76 Optoelectronics – Devices and Applications Optoelectronics – Devices and Applications 92 Gilbert, R. Auchin...

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... c Si 10 .26 20.52 Sn 0 .12 5 Si 0.875 /Si (0 01) 10 .49 20.92 Sn 0.25 Si 0.75 /Si (0 01) 10 ,58 21. 30 Sn 0.5 Si 0.5 /Si (0 01) 10 .79 21. 90 Ge 0 .12 5 Si 0.875 /Si (0 01) 10 .36 20. 71 Ge 0.25 Si 0.75 /Si ... Se/Si 5 /O/Si 5 (0 01) 14 ,62 14 .53 33.07 Se/Si 5 /S/Si 5 (0 01) 14 .64 14 .59 34.28 Se/Si 5 /Se/Si 5 (0 01) 14 .66 14 .66 34.79 Se/Si 6 /O/Si 6 (0...

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... criterion [Busch & Bush, 19 99] 12 01gg  , (15 ) where the parameters g 1 and g 2 are respectively 1 1 1 L g r     , (16 ) 2 2 1 L g r     . (17 ) The optical signal ... Technology, 51, pp. 95 10 1 Hamamatsu, Solid State Division (2 011 ). Technical information SD -12 , Characteristics and use of infrared detectors , Cat. No. KIRD9001E04, Ma...

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... spectrum is appoximately 2 10 17 cm 2 molecule 1 . This is around one thousand times greater than was the case in the 19 2 Optoelectronics – Devices and Applications 11 Optical-Fiber Measurement ... International Symposium on Combustion (code 19 626), Pittsburgh, PA, USA, pp. 17 61 17 67. ISSN:0082-0784. 204 Optoelectronics – Devices and Applications Applications a...

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... (Ω) (pF) (Ω) (pF) (Ω) (pF) 10 36 1. 43 10 .18 5.05 10 . 21 5.05 12 20.8 3 5.88 10 .6 5.88 10 .6 14 14 .11 2.93 3.99 10 .35 3.99 10 .35 Table 1. Comparison of the DBR resistances and capacitances 249 The ... · S (17 ) and S = N w · g 0 ·τ S  ( N − N th ) (18 ) By injecting Equations 17 and 18 in Equation 15 , we obtain: η i · I q · N w − N τ N − g 0  ( N − N th ) = 0...

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... 64, No. 1, (July 19 96), 51- 56, ISSN 10 90-6487. Yang R. Q. (19 95). Optical intersubband transitions in conduction-band quantum wells. Phys. Rev. B vol. 33, No. 16 , (Oct. 19 95-II), 11 958 -11 968, ... = 20 Å  0 = 10 Å E b [meV] L c [Å] 40 60 80 10 0 12 0 8 10 12 14 Å Å Å 60 40 10  0 =  0 =  0 = 0  0 = B GQW E b [meV] L c [Å] 40 60 80 10 0 12 0...

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... Vol .11 5, No .1, (March 19 95), pp. (19 -25). ISSN 0030-4 018 . Yariv, A. & Pochi, Y. (19 84). Optical Waves in Crystals, Wiley, ISBN 0-4 71- 0 914 2 -1, USA. Optoelectronics – Devices and Applications ... Rickenstorff C. (2 010 ). Experimental generating the partially coherent and partially polarized electromagnetic source. Optics Express, Vol .18 , No .12 , (June 2 010...

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