laser direct writing of silicon field effect transistor sensors
laser direct writing of silicon field effect transistor sensors
... http://apl.aip.org/about/rights_and_permissions Laser direct writing of silicon field effect transistor sensors Woongsik Nam, 1,2 James I. Mitchell, 1,2 Chookiat Tansarawiput, 2,3 Minghao Qi, 2,3 and Xianfan Xu 1,2,a) 1 School of Mechanical ... Laser direct writing of silicon field effect transistor sensors Woongsik Nam, James I. Mitchell, Chookiat Tansar...
Ngày tải lên: 06/05/2014, 08:54
laser direct write of silicon nanowires
... Laser direct write of silicon nanowires Input Laser Window SiH 4 , N 2 Gas Nozzle Piezoelectric XYZ stage Zone Plates Substrate CVD Chamber Fig. 1 Schematic diagram of the system for laser direct ... using either cw or fs lasers. Fig. 2 SEM images of (a) cw laser deposited silicon line on polysili- con with a linewidth of around 600 nm. (b) cw laser deposited silico...
Ngày tải lên: 06/05/2014, 08:53
laser direct writing of volume modified fresnel
... methods, the laser direct writing technique has the advantage of ease of fabrication of such a high-efficiency zone plate, eliminating complica- tions in multistep processes. Studies of direct laser ... femtosecond laser direct writing, both the change in index of refraction and the shape of the filament where change of index of refraction occurs are sensitive to...
Ngày tải lên: 06/05/2014, 08:55
Detection of an uncharged steroid with a silicon nanowire field effect transistor
... 2009 Keywords: Biosensor Silicon nanowire field -effect transistor 5 -3-Ketosteroid isomerase Steroid abstract Among biosensors of various types, the silicon nanowire field -effect transistor (SiNW-FET) ... of SiNW-FET sensors was around 0.1–1 nS, and was often observed with the scale of 0.1 nS. The conductance of the Art KSI/mA51-labeled SiNW-FET becomes modulated when th...
Ngày tải lên: 16/03/2014, 15:23
beam propagation modeling of modified volume fresnel zone plates fabricated by femtosecond laser direct writing
... propagation modeling of modified volume Fresnel zone plates fabricated by femtosecond laser direct writing Pornsak Srisungsitthisunti, 1 Okan K. Ersoy, 2, * and Xianfan Xu 1 1 School of Mechanical Engineering, ... femtosecond laser direct writing. This con- cept was experimentally demonstrated with an eight- layer modified VFZP, showing a maximum efficiency of 71.5% [2]. However...
Ngày tải lên: 06/05/2014, 08:53
giao trinh linh kien dien tu TRANSISTOR HIỆU ỨNG TRƯỜNG (FIELD EFFECT TRANSISTOR = FET)
... Chương 5: Transistor hiệu ứng trường 65 Chương 5: TRANSISTOR HIỆU ỨNG TRƯỜNG (FIELD EFFECT TRANSISTOR = FET) 5.1. Khái niệm Transistor trình bày trước được gọi là transistor mối ... và trường này tạo ra một dòng điện ở lối ra. Field Effect Transistor (FET) FET có hai loại: JFET và MOSFET. 5.2. JFET (Junction Field Effect Transistor) : 5.2.1. Cấu tạo – ký hiệu...
Ngày tải lên: 19/09/2013, 17:03
direct writing of conventional thick film inks using maple dw process
... Fig. 4. Ratio of maximum displacement to base radius as a function of laser fluence. Because of the thixotropy of the ink, there will be effective plastic deformation of the bubble and ... printing [4], Selective Laser Sintering (SLS), Laser- Induced Forward Transfer (LIFT), Laser micro-cladding, MicroPen, and Matrix- Assisted Pulsed Laser Evaporation -Direct Writ...
Ngày tải lên: 06/05/2014, 08:53
volume fresnel zone plates fabricated by femtosecond laser direct writing
... plates fabricated inside fused silica using femtosecond laser direct writing are demonstrated. A volume zone plate consists of a number of layers of Fresnel zone plates designed to focus light together. ... have maximum diffraction efficiency of about 40% whereas the amplitude zone plates have maximum effi- ciency of about 10%. 7 Studies of direct laser fabrication of Fr...
Ngày tải lên: 06/05/2014, 09:02
Temperature dependence of morphology and diameter of silicon nanowires synthesized by laser ablation
... oxide exceeded the growth rate of crystal silicon, outer layer of silicon oxide will surround the crystal sil- icon. As a result, the growth of crystal silicon ceased and silicon oxide of outer layer coalesced together ... The peculiar feature of the branch suggests that there may exist a competitive growth between crystal silicon core and outer layer of silicon oxide....
Ngày tải lên: 16/03/2014, 15:09