cross plane electronic and thermal transport properties of p type la0 67sr0 33mno3 lamno3 perovskite oxide metal semiconductor superlattices

cross plane electronic and thermal transport properties of p type la0.67sr0.33mno3 lamno3 perovskite oxide metal semiconductor superlattices

cross plane electronic and thermal transport properties of p type la0.67sr0.33mno3 lamno3 perovskite oxide metal semiconductor superlattices

... Cross- plane electronic and thermal transport properties of p- type La 0.67 Sr 0.33 MnO 3 /LaMnO 3 perovskite oxide metal/ semiconductor superlattices Pankaj Jha, 1,2 Timothy D. Sands, 1,2,3,a) Laura ... CONCLUSIONS Cross- plane transport in LSMO/LMO superlattices has been presented as a potential route to a p- type thermoelectric material. Epitaxial thin-...
Ngày tải lên : 06/05/2014, 08:53
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cross plane thermoelectric transport in p type la0.67sr0.33mno3 lamno3 oxide metal semiconductor superlattices

cross plane thermoelectric transport in p type la0.67sr0.33mno3 lamno3 oxide metal semiconductor superlattices

... Zide, and A. Shakouri, Cross- plane electronic and thermal transport properties of p- type La 0.67 Sr 0.33 MnO 3 /LaMnO 3 perovskite oxide metal/ semiconductor superlattices, ” J. Appl. Phys. 112, ... by ICP-RIE, and (b) the schematic of side view of the final structure of LSMO/LMO superlattices for I-V cross- plane measurement. FIG. 10. Temperature-depe...
Ngày tải lên : 06/05/2014, 08:53
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Electronic transport properties of single crystal silicon nanowires fabricated using an atomic force microscope

Electronic transport properties of single crystal silicon nanowires fabricated using an atomic force microscope

... thinned, prepatterned and doped using conventional microelectronics processes in order to elaborate contact leads and pads. Between contacts, the upper Si was further thinned down to 15 nm and n-doped ... electron micrograph of a thinned Unibond SOI substrate showing the good crystalline structure of the Si upper layer. graphy processes. This connection pattern is made of highly d...
Ngày tải lên : 16/03/2014, 15:15
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Electronic structure and magneto optical properties of solids   v  antonov, b  harmon, a  yaresko

Electronic structure and magneto optical properties of solids v antonov, b harmon, a yaresko

... fields (Pd and Pt). Also TLFeBOOK xii ELECTRONIC STRUCTURE AND MO PROPERTIES OF SOLIDS presented are important 3d compounds such as XPt 3 (X=V, Cr, Mn, Fe, and Co), Heusler alloys, chromium spinel ... theory. Chapter 2 describes the MO properties for a number of 3d materials. Section 2.1 is devoted to the MO properties of elemental ferromagnetic metals (Fe, Co, and...
Ngày tải lên : 17/03/2014, 14:51
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thermal treatment effects on the material and gas-sensing properties of room-temperaturetungstenoxidenanorodsensors

thermal treatment effects on the material and gas-sensing properties of room-temperaturetungstenoxidenanorodsensors

... 600 ◦ CN 2 -annealing samples upon exposure to the three different analytes of 1000 ppm hexane, 1000 ppm benzene, and 10 ppm NH 3 . The bottom square pulses display the time-dependent profiles of supplying air-diluted ... resistance upon exposure to the reducing ethanol vapors, corresponding to p- type response. This phenomenon was previously explained with the competi- tion adsorptio...
Ngày tải lên : 20/03/2014, 13:11
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Tài liệu Báo cáo khoa học: Enzymatic properties of wild-type and active site mutants of chitinase A from Vibrio carchariae, as revealed by HPLC-MS pptx

Tài liệu Báo cáo khoa học: Enzymatic properties of wild-type and active site mutants of chitinase A from Vibrio carchariae, as revealed by HPLC-MS pptx

... a previously published separation profile of chitooligosaccharides obtained by using reverse-phase HPLC and 1 H NMR [14,15]. The earlier peak represented the b anomer and the later peak corresponded ... 362–366. Enzymatic properties of chitinase A from Vibrio carchariae W. Suginta et al. 3386 FEBS Journal 272 (2005) 3376–3386 ª 2005 FEBS Enzymatic properties of wild -type and...
Ngày tải lên : 20/02/2014, 01:20
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Báo cáo " Influence of intradot Coulomb interaction on transport properties of an Aharonov-Bohm interferometer " ppt

Báo cáo " Influence of intradot Coulomb interaction on transport properties of an Aharonov-Bohm interferometer " ppt

... Using Greens function method and the equation of motion approach, we have investigated the electronic transport properties of an Aharonov-Bohm (AB) ring in the presence of a magnetic field with a ... tunneling part H T consists of the couplings between the subsystems, and is given by H T =  kpσ α=L,R  W α kpσ C α+ kσ C p + h.c  +  p  V l pd C + p d σ + h.c  + ...
Ngày tải lên : 05/03/2014, 14:20
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Báo cáo Y học: Spectroscopic characterization and ligand-binding properties of chlorite dismutase from the chlorate respiring bacterial strain GR-1 ppt

Báo cáo Y học: Spectroscopic characterization and ligand-binding properties of chlorite dismutase from the chlorate respiring bacterial strain GR-1 ppt

... dismutase. EPR spectroscopy of the hydrogen peroxide adduct shows the loss of both high-spin and low-spin ferric signals and the appearance of a sharp radical signal. The NO adduct of the ferrous ... ¼ 10 pH À pK a =ð1 þ 10 pH À pK a Þ: Fig. 3. EPR spectroscopy of 0.18 m M monomer ferric chlorite dismu- tase at pH 6 and pH 9. Trace A, 50 m M Ches,pH9.TraceB,50m M potassium pho...
Ngày tải lên : 08/03/2014, 16:20
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Báo cáo khoa học: Stability and fibril formation properties of human and fish transthyretin, and of the Escherichia coli transthyretin-related protein potx

Báo cáo khoa học: Stability and fibril formation properties of human and fish transthyretin, and of the Escherichia coli transthyretin-related protein potx

... TLP group. In contrast, the most conserved regions are found at sites corresponding to b-strands B and E in TLPs, and to a-helix E in TTRs and TRPs. (B) Phylogenetic tree of TRPs, TTRs, and TLPs. ... Lee Y, Park SG, Park BC, Kim GH & Rhee S (2006) Structural and functional analysis of PucM, a hydrolase in the ureide pathway and a member of the transthyretin-related prote...
Ngày tải lên : 16/03/2014, 01:20
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electrical and gas - sensing properties of wo3 semiconductor material

electrical and gas - sensing properties of wo3 semiconductor material

... temperature and the smallest value for high calcining temperature at the operating temperature of 200°C and 250° C, respectively. As shown in Fig. 3, the resistance±operating temperature properties ... 650091, People's Republic of China Received 28 November 2000; received in revised form 22 January 2001; accepted 19 February 2001 Abstract In this paper, the electrical and gas...
Ngày tải lên : 19/03/2014, 16:48
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