wo3 thin film sensor prepared by sol–gel technique and its low-temperature sensing properties to trimethylamine

. Materials Chemistry and Physics 69 (2001) 176–179 WO 3 thin film sensor prepared by sol–gel technique and its low-temperature sensing properties to trimethylamine Maosong Tong, Guorui Dai ∗ ,. sensing characteristics of the thin film sensor to trimethylamine were measured. A low-temperature, high sensitivity, excellent selectivity, quick response and recover of thin film sensors to trimethylami...

Ngày tải lên: 20/03/2014, 13:12

... of defects near the tip of SiNWs prepared by other methods, our present SiNWs with sharp tips and perfect lattices might be promising materials for future nanoprobes and superior field emitters. 2. ... SiH 4 and H 2 flows were turned off, and the sample was cooled to room temperature in an Ar atmosphere. Before TEM characterization, the deposits on one side of the alumina membrane we...

Ngày tải lên: 16/03/2014, 15:08

... 350nm clearly effects on the Raman and XRD spectrograms of WO 3 films. Keywords: WO3 structure, WO3 /ITO/glass, Raman spectroscopy. 1. Introduction WO 3 thin films have been studied for along ... structure between WO 3 films and WO 3 powder sample and between one film to another. These numbers show no difference in structure between WO 3 powder and WO 3 films. Howe...

Ngày tải lên: 13/02/2014, 03:20

. E w is equal to 0.1 eV and 0.35 eV for oxygen dissociative and non-dissociative chemisorption, respectively and 1.2 eV for ozone. 4. Results and discussion The stoichiometry, the grain size and the. by O 2 and O 3 in the dissociative adsorption case. species O 2 ,O 2 − , O or O − at 473 K and O or O − at 573 and 673 K) and ionized covering rate θ − (due to species O 2 − or O − at 473 K and. t...

Ngày tải lên: 20/03/2014, 13:04

. of WO 3 thin film gas sensors. Part 1. Thin film devices, sensors and actuators, Thin Solid Films 287 (1996) 258–265. [7] V. Demarne, A. Grisel, An integrated low-power thin film CO gas sensors. semiconductor surfaces are thought to be ONO − (nitrito type adsorbates) and dissociate into nitrosyl type adsorbates (NO + ,NO − ) [23]. This enables to conclude that the normal response of sensor. tem...

Ngày tải lên: 20/03/2014, 13:07

. Pages 7 Sensors and Actuators B xxx (2009) xxx–xxx Contents lists available at ScienceDirect Sensors and Actuators B: Chemical journal homepage: www.elsevier.com/locate/snb Sensor response of sol–gel. techniques, screen-printing and dip-coating, to cover non-conductive glass substrates with TiO 2 :Multiwall Carbon Nanotubes (MWCNT), and its application as chemical sensors are reported. A sol–ge...

Ngày tải lên: 20/03/2014, 13:07

. which tends to grow into thin Fig. 1. SEM images (top and cross-sectional views) of WO 3 thin films derived from WO 3 ·2H 2 O sols (PEG 2mass%). WO 3 ·2H 2 O content: (a) 1mass%, (b) and (c) 5 mass%. plates. NO 2 sensing prop- erties at 200, 250 and 300 ◦ C. Response and recovery transients in electrical resistance to switching-on and -off 100 and 500 ppb NO 2 are shown in Fig. 3. Response and...

Ngày tải lên: 20/03/2014, 13:11

Ngày tải lên: 03/04/2014, 15:20

... indi- rect band gap due to the formation of surface defects. CuO nanoparticles on the other hand show higher direct band gap as compared to bulk value indicating blue shift of band gap due to the ... vs. photon energy, ν h . Figure 4 and 5 show the variation of 1 () n h αν vs. ν h for CuO nanoparti- cles with n values of 1/2 and 2 respectively. The values of direct and i...

Ngày tải lên: 06/05/2014, 08:55

... indi- rect band gap due to the formation of surface defects. CuO nanoparticles on the other hand show higher direct band gap as compared to bulk value indicating blue shift of band gap due to the ... vs. photon energy, ν h . Figure 4 and 5 show the variation of 1 () n h αν vs. ν h for CuO nanoparti- cles with n values of 1/2 and 2 respectively. The values of direct and i...

Ngày tải lên: 06/05/2014, 08:59