Structures and electronic properties of si nanowires grown along the [1 1 0] direction role of surface reconstruction

... primarily along the [11 0] direction while the NWs with large diameter are grown along the [11 1] direction. The HRTEM has also observed the hexagonal nanowire shape which consists of {0 01} and {11 1} ... and p -bonded chain structures on flat Si( 11 1) surface (0 .13 eV /1 Â 1 cell). The appearance of p - bonded chain implies that the stabilit...

Ngày tải lên: 16/03/2014, 15:37

... blocking of the surface transport in the presence of slowly diffu sing additives at the surface; (2) appearance of the surface flux anisotropy and transfer to the mode of sub-diffusion, when the coverage ... PRESS Fig. 4. The MC simulations of the surface steady-state characteristics under the adsorption of silicon-containing molecules together with the...

Ngày tải lên: 16/03/2014, 15:18

... scale, the Ä4 appearance of 11 1 surfaces of the Si crystals paral- lel to the axes of the nanowires reduces the system energy. Combined, these factors determine the ²: growth direction of Si nanowires ... below. Si O™ Si qSiO x )1 Ž. xxy1 and 2SiO™ SiqSiO . 2 These decompositions result in the precipitation of silicon nanoparticles, i.e. the nuclei...

Ngày tải lên: 16/03/2014, 15:08

... been fabricated previously using the VLS method [10 ,13 16 , 19 – 21, 23,24]. The growth of the SiO x nanowires in the present study can be divided into several steps. In the first step, when the Si wafer with Cu ... for the first time we report the production of SiO x nanowires by the simple heating of Cu-coated Si substrates. We have investigated the effe...

Ngày tải lên: 16/03/2014, 15:14

... Increasing the process time up to 12 0 min does not change the diameter and the length of the silica nanowires significantly, indicating the Fig. 3. EDS spectra according to the positions of the silica ... 2.7 eV band is ascribed to the neutral ox- ygen vacancy (BSi–SiB) [12 ], and the 3 .1 eV band is due to a twofold coordinated silicon lone-pair centers (O Si...

Ngày tải lên: 16/03/2014, 15:03

... Semiconductor Bandstructure 10 19 10 18 10 17 10 16 10 15 10 14 10 13 10 12 10 11 10 10 10 9 10 8 10 7 10 6 10 00 500 200 10 0 27 0 − 20 T (C) 0.5 1. 0 1. 5 2.0 2.5 3.0 3.5 4.0 10 00/T(K − 1 ) Ge Si GaAs I NTRINSIC CARRIER ... arsenide [11 1] [10 0] E g = 1. 43eV at 300 K Figure 2 .17 : Bandstructure of GaAs. The bandgap at 0 K is 1. 51 eV...

Ngày tải lên: 24/01/2014, 17:34

... light emission at 350 nm was observed in oxidized porous silicon and annealed SiO 2 [15 ]. The PL spectrum is also dierent from that of oxidized Si nanowires [16 ]. The growth process of the nanowires ... by the vapor±liquid±solid (VLS) mech- anism, since little droplets can be seen at the tops of the nanowires [17 ]. The growth of the nanowires...

Ngày tải lên: 16/03/2014, 15:07

... consists of the 11 1 , Ž. Ž. 220 and 311 rings of silicon. The other corre- Ž.Ž. Ž. sponds to the 11 1 , 220 and 311 rings of b-SiC. This confirms that the sample is a mixture of SiNWs and b-SiC. ... a Siemens D500 system. The spec- trum shows two sets of peaks. One set consists of the Ž.Ž. Ž. 11 1 , 220 and 311 peaks of Si which are from Ž.Ž. the SiNW...

Ngày tải lên: 16/03/2014, 15:08

... axes of the nanowires can minimize the system energy, since the {1 1 1} surface has the lowest surface energy among the Si surfaces, which becomes increasingly important when the crystal size ... is taken from the single core at the tip area. It could be indexed for the [2 1 1] zone axis of single crys- talline Si, and indicates that the nanowire growth...

Ngày tải lên: 16/03/2014, 15:08

... made assigning to the outstanding ultraviolet-blue emission property of SiC–SiO 2 nanowires. In previous works, the PL property of SiC– SiO 2 nanowires has been studied as -grown [15 19 ] and no effort has ... of hemispheric depositions were found on the surface of the nanowires synthesized under the con- dition -1. The mean diameter of hemispheric depositio...

Ngày tải lên: 16/03/2014, 15:08