Self aligned silicon quantum wires on ag(1 1 0)

... nanowires is typically $1. 4 · 10 12 cm À2 at RT; as will be seen later it can be re- duced upon mild annealing. All these NWs are perfectly aligned along the [ 11 0] direction of the Ag (1 1 0) ... silicon ones along [ 1 1 0]. Indeed, the negligible misfit permits the perfect epitaxial growth of silver (1 1 1) crystallites on the Si (1 11) surface with common [1 1 0] dir...

Ngày tải lên: 16/03/2014, 15:36

... process leading to nucleation of Si nanowires along the {1 1 1} plane walls. Disproportionation of Si monoxide seems to be the key reaction for the formation of Si nanowires by thermal evaporation of pure SiO ... Silicon nanowires grown on Si (1 0 0) substrates via thermal reactions with carbon nanoparticles S. Botti a, * , R. Ciardi a , R. Larciprete b,c , A. Goldoni b , L. Gregora...

Ngày tải lên: 16/03/2014, 15:08

... the length of the SiNWs. The growth plane is one of the (1 1 1) planes and the fast growth direction is along the [)2 1 1] axis of the SiNWs. The (1 1 1) plane family, which is the densest packed ... of crystalline silicon have stimulated much interest because of their low dimension and quantum- confinement effect [1 4]. It has been suggested that they may be used for developing one-d...

Ngày tải lên: 16/03/2014, 15:08

... Physics 26 (2 010 ) 11 5 -12 0 11 5 The dependence of the nonlinear absorption coefficient of strong electromagnetic waves caused by electrons confined in rectangular quantum wires on the temperature ... 26 (2 010 ) 11 5 -12 0 11 7 In order to establish analytical expressions for the nonlinear absorption coefficient of a strong EMW by confined electrons in RQW, we use the quant...

Ngày tải lên: 22/03/2014, 11:20

... possibility to position the nanowires which is essential for most of the applications. In this work, the investigation of Au and In as solvents for the growth of silicon nanowires on Si (1 1 1) via PVD ... surface tension of gold and indium and the surface energy of silicon and silicon oxide. The diffusion coefficients at temperatures around 550 1C for indium and gold on a clean Si...

Ngày tải lên: 16/03/2014, 15:17

... thermal oxidation boron atoms segregate into the forming silicon dioxide leading to decreas e in boron concentration in silicon. On the other hand, the phosphorus concentration increases and the conduction ... During the oxidation the phosphorus concentration has exceeded the boron concentration. Fig. 2. (a) SEM image of silicon nanodiode G3/ 21 with P 0 $7 Â 10 17 cm À3 and N 0 $...

Ngày tải lên: 16/03/2014, 15:20

... defects which are contained among the silicon nano-wire. 4. Conclusions In conclusion, we have synthesized large-scale, very tiny, and very long SiNWs on the substrate of p-Si (1 1 1) wafer using ... SiNWs due to the survived oxygen in TEM system. 30 40 50 60 70 10 20 30 40 50 60 70 Au SiNWs Au(2 20) Au(2 00) Au (11 1) Si( 311 ) Si(2 20) Si (11 1) Intensity 2 Theta ( de g ree ) Fig...

Ngày tải lên: 16/03/2014, 15:22

... p-type Si (1 1 1) wafers as substrates was ÿrst cleaned for 30 min in the acetone 13 86-9477/$ - see front matter ? 2004 Elsevier B.V. All rights reserved. doi :10 .10 16/j.physe.2003 .11 .274 2 J. ... around the droplet with the crystal directions Si (1 1 1) , Si (2 2 0), Si (3 1 1), etc. (Fig. 5b). According to the lowest energy theory, the Si (1 1 1) direction will dominate the...

Ngày tải lên: 16/03/2014, 15:22

... SO 2 + H 2 O (1) Phương trình ion rút gọn của phản ứng (1) là A. 2FeS 2 + 22 H + 7 2 4 SO 2 3 Fe + 11 SO 2 + 11 H 2 O B. 2FeS 2 + 28 H + 11 2 4 SO 2 3 Fe + 15 SO 2 + 14 H 2 O C. ... Cl . D. 3 Fe , 2 Cu , 2 4 SO , Cl . Câu 10 : Cho 4 dung dịch trong suốt, mỗi dung dịch chỉ chứa một loại cation và một loại anion trong số các ion sau: 2 Ba , 3 Al , Na , Ag ,...

Ngày tải lên: 05/10/2012, 08:41

Ngày tải lên: 26/04/2013, 09:52