Visible photoluminescence from silicon ion implanted sio2 ï¬lm and its multip
Visible photoluminescence from silicon ion implanted sio2 ï¬lm and its multip
... Visible photoluminescence from silicon- ion- implanted SiO 2 film and its multiple mechanisms H. Z. Song and X. M. Bao National Laboratory of Solid State Microstructures and Department ... addition, these four bands show different excitation behaviors. The discussion section argues that the 470-, 550-, and 630-nm bands result from different point defects in the bulk of s...
Ngày tải lên: 16/03/2014, 15:31
Highly efficient and stable photoluminescence from silicon nanowires coated with sic
... advance its applica- tions in photophysics and device physics. SiNW were synthesized by thermal evapora- tion from a mixture of silicon and silicon dioxide powder [14,15]. The SiNWs deposited on a silicon wafer ... high transmission of both the ex- citation light and the PL emission with much less loss. It is believed that during the deposition pro- cess, hydrocarbon and hyd...
Ngày tải lên: 16/03/2014, 15:05
Báo cáo khoa học: "Extracting Noun Phrases from Large-Scale Texts: A Hybrid Approach and Its Automatic Evaluation" pot
... Noun Phrases from Large-Scale Texts: A Hybrid Approach and Its Automatic Evaluation Kuang-hua Chen and Hsin-Hsi Chen Department of Computer Science and Information Engineering National Taiwan ... recall and precision for a comparison. 7. Applications Identification of noun phrases in texts is useful for many applications. Anaphora resolution (Hirst, 1981) is to resolve th...
Ngày tải lên: 31/03/2014, 06:20
Dose dependence of room temperature photoluminescence from Si implanted SiO 2
... Australia Abstract Photoluminescence from Si implanted silica is studied as a function of Si fluence and Si concentration profile in order to assess the effect of particle size and size distribution on emission ... distribution. The latter is ex- pected to result from the Gaussian concentration profile produced by ion- implantation. It is there- fore of interest to compare the PL emi...
Ngày tải lên: 16/03/2014, 15:26
Nghiên cứu biến tính xơ dừa và ứng dụng làm vật liệu hấp phụ một số ion kim loại nặng trong nước
... ánh qui luật của cạnh tranh hấp phụ: ñối với hai ion cùng ñiện tích, ion có bán kính nguyên tử càng lớn thì bị hấp phụ càng mạnh. Bán kính ion Cu (II) lớn hơn Zn (II) vì vậy Cu (II) bị hấp ... và ứng dụng làm vật liệu hấp phụ một số ion kim loại nặng trong nước”. 2. Mục ñích nghiên cứu của ñề tài - Biến tính xơ dừa tạo ra vật liệu hấp phụ ion kim loại nặng trong nước - Ứng d...
Ngày tải lên: 23/12/2013, 16:21
Báo cáo khoa học: NMR and molecular dynamics studies of an autoimmune myelin basic protein peptide and its antagonist Structural implications for the MHC II (I-Au)–peptide complex from docking calculations ppt
... confor- mation, with the side chain of Arg78 positioned in a well-defined, predetermined conformation and thus read- ily accessible for post-tran slational modifications, which is relevant to multiple ... the integral protein and in a number of post-translational modification s relevant to multiple sclerosis, such as the reduction in cationicity of MBP, especially due to conversion of positi...
Ngày tải lên: 07/03/2014, 16:20
Si nanowires grown from silicon oxide
... evaporation of a powder mixture of silicon and SiO . 2 Transmission electron microscopy showed that, at the initial nucleation stage, silicon monoxide vapor was generated from the powder mixture and ... decompositions of silicon oxide at the rela- tively low temperature of 9308C as shown below. Si O™ Si qSiO x)1 Ž. xxy1 and 2SiO™ SiqSiO . 2 These decompositions result in the pre...
Ngày tải lên: 16/03/2014, 15:08
Photoluminescence of silicon nanowires obtained by epitaxial chemical vapor deposition
... SiNWs exhibits radiative states below the energy bandgap and a small contribut ion near the silicon gap energy at 1.08 eV. A thermal oxidation allows to decrease the intensity at low energy and to ... dislocations [7]. In contrast, the small contribution at 1.08 eV could be attributed to the recombination of free carriers in the conduction and valence bands. However, the presence of...
Ngày tải lên: 16/03/2014, 15:19
Digital Communications I: Modulation and Coding Course
... ISI Lecture 6 19 Equalization – cont’d Frequency down-conversion Receiving filter Equalizing filter Threshold comparison For bandpass signals Compensation for channel induced ISI Baseband pulse (possibly ... thth RC = T2 1 T4 3 T 1 T4 3− T2 1− T 1− 1 0.5 0 1 0.5 0 T T2 T3 T− T2− T3− s RrW )1( Passband DSB += Lecture 6 12 Pulse shaping and equalization to remove ISI Square-Root Raised...
Ngày tải lên: 18/10/2013, 06:15