Unipolar rectifying silicon nanowires—TCAD study

Unipolar rectifying silicon nanowires—TCAD study

Unipolar rectifying silicon nanowires—TCAD study

... Physica E 40 (2008) 2481–2484 Unipolar rectifying silicon nanowires—TCAD study K. Fobelets a,Ã , J.E. Velazquez-Perez b a Department of Electrical ... have a minor effect. 2. Functioning of the unipolar rectifying nanowire Here we briefly discuss the physics behind the rectifica- tion character of the unipolar NW. The material and geometrical ... increasing overlap. TCAD results...

Ngày tải lên: 16/03/2014, 15:23

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Morphology and growth mechanism study of self assembled silicon nanowires synthesized by thermal evaporation

Morphology and growth mechanism study of self assembled silicon nanowires synthesized by thermal evaporation

... methods is the formation of a sucient amount of silicon atoms and/or silicon oxide clusters in gas phase from the target powders of silicon or silicon oxide by laser ablation or high temperature ... vapor-phase silicon atoms and/or sili- con oxide clusters. When the Ni(Fe)Si 2 droplet reaches supersaturation after dissolving sucient silicon atoms from the gas phase, precipitatio...

Ngày tải lên: 16/03/2014, 15:06

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A study in the growth mechanism of silicon nanowires with or without metal catalyst

A study in the growth mechanism of silicon nanowires with or without metal catalyst

... A study in the growth mechanism of silicon nanowires with or without metal catalyst Jun-Jie Niu ⁎ , Jian-Nong Wang School ... the catalytic growth. However, the growth of silicon nanowires with sulfide is chiefly affected by the compound decomposition, gas stream, and temperature difference. Silicon nanowires fabricated with metal ... and silane with a desired flow rati o were flowed....

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A simple route to annihilate defects in silicon nanowires

A simple route to annihilate defects in silicon nanowires

... defect-free silicon nanowires can be prepared in a simple and practical way, which holds promise for nanoelectronic applica- tions. Ó 2000 Elsevier Science B.V. All rights reserved. 1. Introduction Silicon ... of silicon with a dia- mond structure. Analysis using energy dispersive X-ray spectroscopy (EDS) attached to the TEM con®rmed that the nanowires have a crystalline Si core and an...

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Carbon assisted synthesis of silicon nanowires

Carbon assisted synthesis of silicon nanowires

... 2003 Abstract Carbon-assisted synthesis of silicon nanowires has been accomplished with silicon powders as well as solid sub- strates. The method involves heating an intimate mixture of silicon powder and activated ... 3b, indicates the core to be of cubic silicon. The XRD pattern of the product, given in Fig. 2b, is char- acteristic of cubic silicon with a small impurity of silica....

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Growth kinetics of silicon nanowires by platinum assisted vapour–liquid–solid mechanism

Growth kinetics of silicon nanowires by platinum assisted vapour–liquid–solid mechanism

... those for nanowires fabri- cated with Au. 2. Experimental Silicon nanowires were fabricated by the conventional CVD pro- cess using silicon tetrachloride (SiCl 4 ) as a precursor. Using an E- beam ... resulting in different activation energy. Ó 2008 Elsevier B.V. All rights reserved. 1. Introduction Silicon (Si) nanowires have novel properties as well as comple- mentary metal oxide semi...

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Growth of amorphous silicon nanowires via a solid–liquid–solid mechanism

Growth of amorphous silicon nanowires via a solid–liquid–solid mechanism

... method 8 , sufficient silicon atoms were evaporated at high temperature from the powder target due to the extremely high specific ratio of surfacervolume compared to bulk silicon. Such a high ... the Si substrate was covered by a thin layer of Ni. Therefore, the only possible silicon source comes from the bulk silicon substrate because no extra Si source was introduced into the vapor...

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Growth of amorphous silicon nanowires

Growth of amorphous silicon nanowires

... vertically aligned amorphous silicon nanowires on Au±Pd co-deposition silicon oxide substrate by thermal chemical vapor deposition using SiH 4 gas at 800°C. The diameter of silicon nanowires is in ... crystalline state silicon nanowires with a thin oxide outer layer. Amorphous state silicon nanowires have been reported very slightly. Recently, Yan et al. [16] have prepared amor- pho...

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Highly efficient and stable photoluminescence from silicon nanowires coated with sic

Highly efficient and stable photoluminescence from silicon nanowires coated with sic

... and hydrogen ions react with silicon oxide to form carbon oxide and silicon car- bide. The carbon oxide gas was pumped out while silicon carbide remained on the silicon nanowire. Fig. 2b shows ... physics. SiNW were synthesized by thermal evapora- tion from a mixture of silicon and silicon dioxide powder [14,15]. The SiNWs deposited on a silicon wafer have an average diameter of...

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Iron catalytic growth of prism shaped single crystal silicon nanowires by chemical vapor deposition of silane

Iron catalytic growth of prism shaped single crystal silicon nanowires by chemical vapor deposition of silane

... properties. Since silicon has long been the dominant material in semiconductor and microelectronics indus- tries, thus the study of synthesis and properties of nanostructured silicon material ... 3. TEM images of silicon nanostructures growth by different pyrolysis time of silane. (a) a triangle-shaped silicon tip grown on a CNT by 30-min pyrolysis time. (b) A rectangle silicon gro...

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