Silicon nanowires fabricated by thermal evaporation of silicon monoxide
Silicon nanowires fabricated by thermal evaporation of silicon monoxide
... 134
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Silicon nanowires fabricated by thermal evaporation of
silicon monoxide
Junjie Niu
a
, Jian Sha
a; b
, Deren Yang
a;∗
a
State Key Lab of Silicon Materials, Zhejiang ... silicon nanowires (SiNWs) with a diameter of ∼30 nm and length of tens of micrometers on
Al
2
O
3
templates and silicon wafers were synthesized by the ther...
Morphology and growth mechanism study of self assembled silicon nanowires synthesized by thermal evaporation
... study of self-assembled
silicon nanowires synthesized by thermal evaporation
Z. Zhang
1
, X.H. Fan, L. Xu, C.S. Lee, S.T. Lee
*
Center of Super-Diamond and Advanced Films & Department of Physics ... ther-
mal evaporation [14±17] are two methods nor-
mally used for the synthesis of SiNWs. The key
point in these two methods is the formation of a
sucient amount of s...
Large scale synthesis, characterization and photoluminescence properties of amorphous silica nanowires by thermal evaporation of silicon monoxide
... 2009
PACS:
61.46.–w
81.07.–b
Keywords:
Silicon monoxide
Silicon oxide nanowires
Thermal evaporation
Photoluminescence
abstract
A single step non-catalytic process based on thermal evaporation of silicon monoxide has been
established ... Large-scale synthesis, characterization and photoluminescence properties of
amorphous silica nanowires by thermal evaporation...
Sulfide assisted growth of silicon nano wires by thermal evaporation of sulfur powders
... 2004
Abstract
Silicon nanowires (SiNWs) with a diameter of B20 nm were synthesized by the thermal evaporation of
sulfur powders on silicon wafers. The source of the SiNWs came from the silicon substrates. ... surface
oxidation of nanowires. This suggests that the
nanowires were composed of silicon and silicon
oxide as sheath. Actually, some SiNWs could be
oxidiz...
Temperature-Controlled Growth of Silicon-Based Nanostructures by Thermal Evaporation of SiO Powders
... Temperature-Controlled Growth of Silicon- Based Nanostructures by Thermal Evaporation
of SiO Powders
Z. W. Pan,
†
Z. R. Dai,
†
L. Xu,
‡
S. T. Lee,
‡,
* and Z. L. Wang*
,†,§
School of Materials Science ... found to play a dominant role
in the nucleation and growth of Si nanowires. The growth
mechanism of Si nanowires from thermal evaporation of SiO
powders, however, i...
Temperature dependence of morphology and diameter of silicon nanowires synthesized by laser ablation
... oxide
exceeded the growth rate of crystal silicon, outer
layer of silicon oxide will surround the crystal sil-
icon. As a result, the growth of crystal silicon
ceased and silicon oxide of outer layer coalesced
together ... The
peculiar feature of the branch suggests that there
may exist a competitive growth between crystal
silicon core and outer layer of silicon oxide....
Characterization of tin catalyzed silicon nanowires synthesized by the hydrogen radical assisted deposition method
... Characterization of Tin-catalyzed silicon nanowires synthesized by the hydrogen
radical-assisted deposition method
Minsung Jeon
⁎
, Hisashi Uchiyama, Koichi Kamisako
Department of Electronic and ... 2008
Available online 9 October 2008
Keywords:
Tin catalyst
Silicon nanowires
Hydrogen radicals
VLS mechanism
Phase diagram
Tin-catalyzed silicon nanowires (SiNWs) were synthesiz...
Dimensional evolution of silicon nanowires synthesized by au–si island catalyzed chemical vapor deposition
... (2007) 153–157
Dimensional evolution of silicon nanowires synthesized by
Au–Si island-catalyzed chemical vapor deposition
D.W. Kwak, H.Y. Cho, W C. Yang
Ã
Department of Physics and Quantum-Functional ... evolution of silicon nanowires (Si-NWs) on Si (0 0 1) and (1 1 1) substrates
synthesized using nanoscale Au–Si island-catalyzed rapid thermal chemical vapor deposition. The...
Electronic transport properties of single crystal silicon nanowires fabricated using an atomic force microscope
... ultra-thin silicon layers
(thickness as low as 5–20 nm), and allows to obtain
a very sharp interface silicon layer=buried oxide. The
electrical conductance of silicon nanowires (section of
15×50 ... average resistivity of all heavily doped
(10
19
cm
−3
) nanowires is found to be 83 m cm, a
value higher by a factor of 14 than expected from the
design data of 6 m cm (a f...
Photoluminescence of silicon nanowires obtained by epitaxial chemical vapor deposition
... 20 0-nm-thick silicon on
insulator thin films [8–10].
Simulation of the emission spectrum of an ehp by a convolu-
tion product of the density of states of the carriers affected by the
Fermi–Dirac ... 2008
PACS:
71.35.Ee
78.55.Ae
78.67.Àn
Keywords:
Nanowires
Silicon
Photoluminescence
Exciton
Electron-hole-plasma
abstract
We have carried out photoluminescence measurements of...
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