Silicon nanowires fabricated by thermal evaporation of silicon monoxide
Silicon nanowires fabricated by thermal evaporation of silicon monoxide
... 134 www.elsevier.com/locate/physe Silicon nanowires fabricated by thermal evaporation of silicon monoxide Junjie Niu a , Jian Sha a; b , Deren Yang a;∗ a State Key Lab of Silicon Materials, Zhejiang ... silicon nanowires (SiNWs) with a diameter of ∼30 nm and length of tens of micrometers on Al 2 O 3 templates and silicon wafers were synthesized by the ther...
Ngày tải lên: 16/03/2014, 15:21
Morphology and growth mechanism study of self assembled silicon nanowires synthesized by thermal evaporation
... study of self-assembled silicon nanowires synthesized by thermal evaporation Z. Zhang 1 , X.H. Fan, L. Xu, C.S. Lee, S.T. Lee * Center of Super-Diamond and Advanced Films & Department of Physics ... ther- mal evaporation [14±17] are two methods nor- mally used for the synthesis of SiNWs. The key point in these two methods is the formation of a sucient amount of s...
Ngày tải lên: 16/03/2014, 15:06
Large scale synthesis, characterization and photoluminescence properties of amorphous silica nanowires by thermal evaporation of silicon monoxide
... 2009 PACS: 61.46.–w 81.07.–b Keywords: Silicon monoxide Silicon oxide nanowires Thermal evaporation Photoluminescence abstract A single step non-catalytic process based on thermal evaporation of silicon monoxide has been established ... Large-scale synthesis, characterization and photoluminescence properties of amorphous silica nanowires by thermal evaporation...
Ngày tải lên: 16/03/2014, 15:18
Sulfide assisted growth of silicon nano wires by thermal evaporation of sulfur powders
... 2004 Abstract Silicon nanowires (SiNWs) with a diameter of B20 nm were synthesized by the thermal evaporation of sulfur powders on silicon wafers. The source of the SiNWs came from the silicon substrates. ... surface oxidation of nanowires. This suggests that the nanowires were composed of silicon and silicon oxide as sheath. Actually, some SiNWs could be oxidiz...
Ngày tải lên: 16/03/2014, 15:21
Temperature-Controlled Growth of Silicon-Based Nanostructures by Thermal Evaporation of SiO Powders
... Temperature-Controlled Growth of Silicon- Based Nanostructures by Thermal Evaporation of SiO Powders Z. W. Pan, † Z. R. Dai, † L. Xu, ‡ S. T. Lee, ‡, * and Z. L. Wang* ,†,§ School of Materials Science ... found to play a dominant role in the nucleation and growth of Si nanowires. The growth mechanism of Si nanowires from thermal evaporation of SiO powders, however, i...
Ngày tải lên: 16/03/2014, 15:30
Temperature dependence of morphology and diameter of silicon nanowires synthesized by laser ablation
... oxide exceeded the growth rate of crystal silicon, outer layer of silicon oxide will surround the crystal sil- icon. As a result, the growth of crystal silicon ceased and silicon oxide of outer layer coalesced together ... The peculiar feature of the branch suggests that there may exist a competitive growth between crystal silicon core and outer layer of silicon oxide....
Ngày tải lên: 16/03/2014, 15:09
Characterization of tin catalyzed silicon nanowires synthesized by the hydrogen radical assisted deposition method
... Characterization of Tin-catalyzed silicon nanowires synthesized by the hydrogen radical-assisted deposition method Minsung Jeon ⁎ , Hisashi Uchiyama, Koichi Kamisako Department of Electronic and ... 2008 Available online 9 October 2008 Keywords: Tin catalyst Silicon nanowires Hydrogen radicals VLS mechanism Phase diagram Tin-catalyzed silicon nanowires (SiNWs) were synthesiz...
Ngày tải lên: 16/03/2014, 15:10
Dimensional evolution of silicon nanowires synthesized by au–si island catalyzed chemical vapor deposition
... (2007) 153–157 Dimensional evolution of silicon nanowires synthesized by Au–Si island-catalyzed chemical vapor deposition D.W. Kwak, H.Y. Cho, W C. Yang à Department of Physics and Quantum-Functional ... evolution of silicon nanowires (Si-NWs) on Si (0 0 1) and (1 1 1) substrates synthesized using nanoscale Au–Si island-catalyzed rapid thermal chemical vapor deposition. The...
Ngày tải lên: 16/03/2014, 15:15
Electronic transport properties of single crystal silicon nanowires fabricated using an atomic force microscope
... ultra-thin silicon layers (thickness as low as 5–20 nm), and allows to obtain a very sharp interface silicon layer=buried oxide. The electrical conductance of silicon nanowires (section of 15×50 ... average resistivity of all heavily doped (10 19 cm −3 ) nanowires is found to be 83 m cm, a value higher by a factor of 14 than expected from the design data of 6 m cm (a f...
Ngày tải lên: 16/03/2014, 15:15
Photoluminescence of silicon nanowires obtained by epitaxial chemical vapor deposition
... 20 0-nm-thick silicon on insulator thin films [8–10]. Simulation of the emission spectrum of an ehp by a convolu- tion product of the density of states of the carriers affected by the Fermi–Dirac ... 2008 PACS: 71.35.Ee 78.55.Ae 78.67.Àn Keywords: Nanowires Silicon Photoluminescence Exciton Electron-hole-plasma abstract We have carried out photoluminescence measurements of...
Ngày tải lên: 16/03/2014, 15:19