Controlled growth of oriented amorphous silicon nanowires via a solid–liquid–solid (SLS) mechanism
Controlled growth of oriented amorphous silicon nanowires via a solid–liquid–solid (SLS) mechanism
... interface; (d) ÿnal state of the SiNW growth. The smooth surface of the original substrate becomes rough at the end of the SiNW growth. via a SLS mechanism. Fig. 4 (a) shows an SEM image of oriented ... process involves solid–liquid–solid phases, it is named as a SLS growth, which is in fact an analogy of the VLS mechanism. The growth process of the a- SiNWs via...
Ngày tải lên: 16/03/2014, 15:14
Growth of amorphous silicon nanowires via a solid–liquid–solid mechanism
... 2000 Ž. Chemical Physics Letters 323 2000 224–228 www.elsevier.nlrlocatercplett Growth of amorphous silicon nanowires via a solid–liquid–solid mechanism H.F. Yan a , Y.J. Xing a, b , Q.L. Hang a , D.P. Yu a, ) , ... laser ablation of a powder target or directly from silane. In this Letter, we report that a- SiNWs can be controllably grown on a silicon substrat...
Ngày tải lên: 16/03/2014, 15:05
Polymer assisted synthesis of aligned amorphous silicon nanowires and their core shell structures with au nanoparticles
... Sheng-rong Yang a, * a State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China b Graduate School of the Chinese Academy of ... Polymer-assisted synthesis of aligned amorphous silicon nanowires and their core/shell structures with Au nanoparticles Xing-bin Yan a, b , Tao Xu a , Shan Xu a, b ,...
Ngày tải lên: 16/03/2014, 15:06
Growth of amorphous silicon nanowires
... The growth rate of the nanowires is estimated to be ca. 15 nm/min. The diameter of the nanowires is about 40 nm. A lot of nanowires are assembling along the same direction and are not parallel ... the silicon nanowires grown on a substrate deposited with AuPd alloy as catalyst for 1 min. (a) Low-mag- ni®cation images of silicon nanowires. (b) and (c) A magni®ed vi...
Ngày tải lên: 16/03/2014, 15:05
Rational growth of highly oriented amorphous silicon nanowire films
... discovery of carbon nanotubes [1] and nanowires [2–6]. A diverse variety of semiconduc- tor nanowires, such as silicon, GaAs, GaN, and ZnO nanowires, were synthesized using different approaches. Of those ... free-standing wires of very high density, and has a thickness of about 30 lm (also the length of the nanowires) . The growth rate of nanowires is faster than 10...
Ngày tải lên: 16/03/2014, 15:07
Morphology and growth mechanism study of self assembled silicon nanowires synthesized by thermal evaporation
... formation of a sucient amount of silicon atoms and/or silicon oxide clusters in gas phase from the target powders of silicon or silicon oxide by laser ablation or high temperature evaporation. A growth ... continual phase separa- tion and precipitation and results in the formation of SiNWs made of a Si core and a SiO 2 sheath. The one-dimensional growth of SiN...
Ngày tải lên: 16/03/2014, 15:06
Temperature-Controlled Growth of Silicon-Based Nanostructures by Thermal Evaporation of SiO Powders
... ablation. 11-15 In thermal evaporation, oxides were found to play a dominant role in the nucleation and growth of Si nanowires. The growth mechanism of Si nanowires from thermal evaporation of ... Introduction Silicon- based nanoscale materials have attracted much at- tention in recent years for their valuable semiconducting, mechanical, and optical properties, as well as th...
Ngày tải lên: 16/03/2014, 15:30
Diffusion controlled growth of semiconductor nanowires vapor pressure versus high vacuum deposition
... 1. Analysis of data presented in Table 1 shows that wires consume abou t 32% of all adatom s in the case of AlGaAs and about 15% in the case of GaAs. The effective diffusion length on the substrate ... experimental data on the length of GaAs nanowires grown by MBE on the GaAs(1 11)B surface activated by Au drops within the tem- perature range of 460–600 °C. It is seen that the ave...
Ngày tải lên: 16/03/2014, 15:32
Characterization of tin catalyzed silicon nanowires synthesized by the hydrogen radical assisted deposition method
... 2008 Available online 9 October 2008 Keywords: Tin catalyst Silicon nanowires Hydrogen radicals VLS mechanism Phase diagram Tin-catalyzed silicon nanowires (SiNWs) were synthesized at various ... one-dimensional nanostructure materi- als, such as nanowires, nanorods, nanotubes and nanoribbons [2]. These nanomaterials provide a good system to research the depen- dence of electri...
Ngày tải lên: 16/03/2014, 15:10
Ultrafast growth of single crystalline si nanowires
... TEM image of Si nanoparticles by cathode arc plasma. Fig. 3. (a) TEM image of Si nanoparticles after heat treatment at 980 °C without Fe catalysts and (b) nanowires with Fe, (c) TEM image showing ... detail of SLS process for silicon nanowires is not expatiated. In this paper, we Fig. 4. (a) TEM image showing catalysts at the end of nanotubes, (b) TEM image of an individual na...
Ngày tải lên: 16/03/2014, 15:13