Tailoring of amorphous siox nanowires grown by rapid thermal annealing

... Tailoring of amorphous SiO x nanowires grown by rapid thermal annealing Yi-Sheng Lai a, * , Jyh-Liang Wang b , Sz-Chian Liou c , Chia-Hsun Tu d a Department of Materials Science ... demonstrate the growth of Pt-catalyzed SiO x nanowires by a simple procedure, i.e., rapid thermal annealing. The effect of growth parameters on the evolu- tion of SiO x nanowires...

Ngày tải lên: 16/03/2014, 15:09

... 2a, shows the nanowires grown from the seed parti- cles. The diameter of the nanowires ranges be- tween 15 and 35 nm. Process time did not affect the length and the diameter of the nanowires signifi- cantly. ... The profile resembles that of the standard EELS spectrum of amorphous silica. (c) A HRTEM photograph and a SAD pattern showing the amorphous characteristic of the...

Ngày tải lên: 16/03/2014, 15:03

... 1. Schematic illustration of synthesized b-SiC nanowires. Fig. 2. SEM image of the nanoporous AAO template surface. Fig. 3. SEM image of b-SiC nanowires synthesized by thermal evaporation: (a) with ... of SiC nanowires synthesized using the AAO template by thermal evaporation. It reveals that large quantities of randomly distributed wire-like products have been obtaine...

Ngày tải lên: 16/03/2014, 15:21

... and expedite the reduction of TiN by supply- ing extra hydrogen by thermal decomposition of Fig. 1. FESEM photographs of a-SiONWs nanowires grown on the substrates after annealing at 1050 °C in: ... were detected by the EELS in the nanowires. The carbon on the shell is supplied by thermal decom- position of CH 4 by nickel. No carbon shells were ob- served from th...

Ngày tải lên: 16/03/2014, 15:04

... agglomerated clusters consisting of high density of nanowires. The magnified view of a single cluster is depicted in the inset of Fig. 2(d). These observations suggest that growth of nanowires in the present ... we report large-scale synthesis of pure silica (SiO 2 ) nanowires by a non-catalytic approach based on thermal evaporation of SiO under argon ambient with traces...

Ngày tải lên: 16/03/2014, 15:18

... composition of the as -grown nanowires. Fig. 3(a) shows the EDX spectrum of the round tip on top of a nanowire (Fig. 2(b)), and Fig. 3(b) shows the EDX spectrum from long bundles of tangled silica nanowires ... O, 41.87 at% of Si, 8.66 at% of V, 0.74 at% of Zn, and no Cl, for the catalyst tip in Fig. 2(b), and 60.28 at% of O, 39.40 at% of Si, 0.32 at% of V, and no Zn o...

Ngày tải lên: 16/03/2014, 15:19

... consists of nanoparticles of a few Fig. 2. Schematic depiction of SiNW growth by the SLS mecha- Ž. Ž . nism: a deposition of a thin layer of Ni on the Si 111 substrate; Ž. Ž. b formation of the ... is not yet clear why the resultant nanowires are amorphous instead of crystalline, we think that the amorphous state is closely related to the more rapid speed of growth u...

Ngày tải lên: 16/03/2014, 15:05

... of the nanowires is 30 nm. The alignment of the nanowires is improved. Compared with our previously work [17], we got amorphous aligned silicon nanowires instead of the randomly distributed nanowires. ... SEM images of the nanowires grown on 5 nm Au±Pd deposited substrate. (a) Low-magni®cation images of silicon nanowires. (b) A magni®ed image of (a). Fig. 2. TEM imag...

Ngày tải lên: 16/03/2014, 15:05

... that of oxidized Si nanowires [16]. The growth process of the nanowires can be explained by the vapor±liquid±solid (VLS) mech- anism, since little droplets can be seen at the tops of the nanowires ... shows the formation of the nanowires at a diameter of 60±110 nm and a length up to hundreds micrometers. Besides most smooth-surface polyp- shaped nanowires, two other forms...

Ngày tải lên: 16/03/2014, 15:07

... report the production of SiO x nanowires by the simple heating of Cu-coated Si substrates. We have investigated the effect of Cu layer thickness on the growth of SiO x nanowires. We discuss the possible ... morphology of SiO x nanowires (Arrow 1: helical nanowires or nanosprings; Arrow 2: nanoparticles). The lower right inset of (a) is the SAED pattern of SiO x nanowir...

Ngày tải lên: 16/03/2014, 15:14