Preparation and photoluminescence properties of amorphous silica nanowires

... Preparation and photoluminescence properties of amorphous silica nanowires X.C. Wu * , W.H. Song, K.Y. Wang, T. Hu, B. Zhao, Y.P. Sun, J.J. Du Laboratory of Internal Friction and Defects ... of the nanowires at a diameter of 60±110 nm and a length up to hundreds micrometers. Besides most smooth-surface polyp- shaped nanowires, two other forms of nanowires, name...

Ngày tải lên: 16/03/2014, 15:07

... Large-scale synthesis, characterization and photoluminescence properties of amorphous silica nanowires by thermal evaporation of silicon monoxide Sanjay K. Srivastava a, Ã , P.K. ... revealed that the nanowires consisted of mainly two elements Si and O in an atomic ratio of approximately 1:2 corresponding to silicon dioxide. Photoluminescence spectra of the silica...

Ngày tải lên: 16/03/2014, 15:18

... 2(b), and 60.28 at% of O, 39.40 at% of Si, 0.32 at% of V, and no Zn or Cl, for the long nanowires in Fig. 1(b). Thus, it is confirmed that, V acted as a catalyst in the growth of silica nanowires; ... light-emitting devices compatible to CMOS technology. Amorphous silica nanowires (SiONWs) are promising 1D luminescence materials. The photoluminescence (PL) band of bu...

Ngày tải lên: 16/03/2014, 15:19

... 2003 Published online: 5 December 2003 Abstract Amorphous silica nanowires (a-SiONWs) were produced by direct solid state transformation from silica films. The silica nanowires grow on TiN/Ni/SiO 2 /Si substrates ... fine structure EELS of the silicon 2p edge from the inner phase reveals the formation of amorphous silica nanowire (Fig. 2c); Carbon 1s edge band form the outsi...

Ngày tải lên: 16/03/2014, 15:04

... show that the elasticity and strength of SiC nanowires are considerably greater than those of SiC whiskers and bulk SiC. A variety of methods on the synthesis of SiC nanowires have been developed, ... pure nanowires (Fig. 5b). The presence of peaks demonstrates that the nanowires are composed of Si, C and small amount of O. It is found that the molecular ratio of...

Ngày tải lên: 16/03/2014, 15:21

... Preparation and photoluminescence of high density SiOx nanowires with Fe 3 O 4 nanoparticles catalyst X.J. Wang a, ⁎ , B. Dong b , Z. Zhou a a School of Electronics Engineering and Computer ... hundreds of micrometers, and the diameters of nanowires are 20–80 nm. Transmission electron microscopy and high-resolution transmission electron microscopy show that the SiOx n...

Ngày tải lên: 16/03/2014, 15:11

... in terms of the projection of energy band in bulk Si and confinement effect: the confinement decreases the energy of HO states and in- creases the energy of the LU states, but the magnitude of the ... potential of an Si (H) atom, n Si (n H ) is the number of Si (H) atoms, and e z is the zero-point energy of Si–H vibrations. The value of l Si is equal to that in bulk Si...

Ngày tải lên: 16/03/2014, 15:37

... high. Investigating the electronic properties of 1D nanoma- terials can reveal the relationship between the electronic properties of emitters and the FE properties of the device. In addition, it ... with a diameter of 15 nm and a length of 800 nm was embedded in the PR. Fig. 2 (a) TEM image of an a-Fe 2 O 3 NW, (b) HR-TEM image of the a-Fe 2 O 3 nanowire, and the SAE...

Ngày tải lên: 20/03/2014, 13:08

... moisture. The nature and function properties of the FPI include: the ability to foam and emulsification. Foaming Index of the FPI is 0.77 at pH = 5.5, Emulsifying Activity Index (EAI) of the FPI is ... focuses on the research of molecular weight of peptides in the FPI; FPI chemical contents and initial examining of two functional properties (foaming, emulsification) o...

Ngày tải lên: 31/12/2013, 10:33

... electrons populate both the L and X valleys in addition to the Γ-valley, making these regions of bandstructure quite important. The valence band of GaAs has the standard HH, LH, and SO bands. Due to the large ... can be seen, the region of interest varies depending upon the kind of devices one is interested in. Bandedge properties are often captured by density of states (numbe...

Ngày tải lên: 24/01/2014, 17:34