Oriented silicon nanowires on silicon substrates from oxide assisted growth and gold catalysts

... Oriented silicon nanowires on silicon substrates from oxide- assisted growth and gold catalysts Yuan Yao a , Fanghua Li b , Shuit-Tong Lee a, * a Center of Super-Diamond and Advanced ... 2005 Available online 25 March 2005 Abstract High-density, oriented silicon nanowires (SiNWs) array were fabricated on (0 0 1) silicon substrates by the oxide- assiste...

Ngày tải lên: 16/03/2014, 15:06

... having grown silica or silicon nitride instead of pure silicon nanowires. However, the nanowires and the photostructurable glass were expected to contain mainly silicon and oxygen. Therefore, ... approximately 90.4 and 4.9 at% for silicon and oxygen, respectively. Though the growth process leads to a pure silicon nanowire, a thin layer of natural silicon oxide is fo...

Ngày tải lên: 16/03/2014, 15:17

... of gold and indium on silicon, the solubility of substrate atoms in the two metals, the surface tension of gold and indium and the surface energy of silicon and silicon oxide. The diffusion coefficients ... without desorption step. Silicon nanowires were obtained after silicon evapora- tion on substrates with indium and on those with gold. Without desorptio...

Ngày tải lên: 16/03/2014, 15:17

... Characterization of Tin-catalyzed silicon nanowires synthesized by the hydrogen radical -assisted deposition method Minsung Jeon ⁎ , Hisashi Uchiyama, Koichi Kamisako Department of Electronic and Information ... electrical, optical and magnetic properties [3–8]. They are also expected to play an important role as both interconnections and functional units in fabrication of e lectro...

Ngày tải lên: 16/03/2014, 15:10

... be completely removed. On one hand it acts as a barrier for the direct interaction between hydro- carbons and Si and formation of SiC, and on the other hand, being exposed to ÔactiveÕ C containing species, ... process leading to nucleation of Si nanowires along the {1 1 1} plane walls. Disproportionation of Si monoxide seems to be the key reaction for the formation of Si nanowire...

Ngày tải lên: 16/03/2014, 15:08

... pro- cess, hydrocarbon and hydrogen ions react with silicon oxide to form carbon oxide and silicon car- bide. The carbon oxide gas was pumped out while silicon carbide remained on the silicon nanowire. Fig. ... applica- tions in photophysics and device physics. SiNW were synthesized by thermal evapora- tion from a mixture of silicon and silicon dioxide powder [14...

Ngày tải lên: 16/03/2014, 15:05

... separate electron and hole injection. The sample configuration, contact geometry and charge distribution are demonstrated in Fig. 5. The preparation started from an SOI wafer with a silicon film thickness ... the semiconductor bulk. Using Eq. (1) in Poisson’s equation, and the materials parameters from Ref. [10] as mentioned in Fig. 2, the shape of the conduction band is demonstrate...

Ngày tải lên: 16/03/2014, 15:14

... 2000 Abstract Highly oriented amorphous silicon nanowires (a-SiNWs ) were grown on Si (1 1 1). The length and diameter of oriented SiNWs are almost uniform, which are 1 m and 25 nm, respectively. Dierent from ... with considerable Si concentration was either supplied from laser ablation of a powder target, or directly from silane. In this paper, we report that oriented...

Ngày tải lên: 16/03/2014, 15:14

... chemisorption of specific molecules on silicon nanowires. STM data demonstrate that depending on the molecular functional groups, the molecules adsorb either randomly on the substrate or preferentially on ... Surface Science Letters One-dimensional organic nanostructures: A novel approach based on the selective adsorption of organic molecules on silicon nanowires Eric Salomo...

Ngày tải lên: 16/03/2014, 15:35

... Kowloon, Hong Kong Received 14 April 2000 Abstract Defects inside silicon nanowires (SiNW) could be signi®cantly reduced by annealing the nanowires at 1100° C for 6 h. High-resolution transmission ... in silicon nanowires Y.H. Tang, Y.F. Zheng, C.S. Lee, S.T. Lee * Center of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University o...

Ngày tải lên: 16/03/2014, 15:03