Oriented silicon nanowires on silicon substrates from oxide assisted growth and gold catalysts

... Oriented silicon nanowires on silicon substrates from oxide- assisted growth and gold catalysts Yuan Yaoa, Fanghua Lib, Shuit-Tong Leea,*aCenter of Super-Diamond and Advanced ... 2005Available online 25 March 2005AbstractHigh-density, oriented silicon nanowires (SiNWs) array were fabricated on (0 0 1) silicon substrates by the oxide- assisted growth method assisted with ... Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong,Tat Chee Avenue, Kowloon, Hong Kong SAR, ChinabInstitute of Physics and Center for Condensed Matter...

Growth of silicon nanowires on UV structurable glass using self organized nucleation centres

... having grown silica or silicon nitrideinstead of pure silicon nanowires. However, the nanowires and the photostructurable glass were expected to containmainly silicon and oxygen. Therefore, ... approximately 90.4 and 4.9 at% for silicon and oxygen, respectively. Though the growth process leads to a pure silicon nanowire, a thinlayer of natural silicon oxide is formed soon after theremoval ... contacting nanowires for electrical measurements. In the mostcommon approach, the nanowire is removed from its growth substrate and placed on an additional sample bysuspension in solvents and...

Investigation of au and in as solvents for the growth of silicon nanowires on si(1 1 1)

... of gold and indium on silicon, the solubility of substrate atoms in the twometals, the surface tension of gold and indium and thesurface energy of silicon and silicon oxide. The diffusion coefﬁcients ... without desorption step. Silicon nanowires were obtained after silicon evapora-tion on substrates with indium and on those with gold. Without desorption step, however, no wire growth from indium ... area between indium and silicon. This leads tolarger droplets compared to those on the silicon oxide surface.The size and distribution of gold and indium droplets on the silicon surface that we...

Characterization of tin catalyzed silicon nanowires synthesized by the hydrogen radical assisted deposition method

... Characterization of Tin-catalyzed silicon nanowires synthesized by the hydrogenradical -assisted deposition methodMinsung Jeon⁎, Hisashi Uchiyama, Koichi KamisakoDepartment of Electronic and Information ... electrical, optical and magnetic properties [3–8]. They arealso expected to play an important role as both interconnections and functional units in fabrication of e lectronic, optoelectronic and electrochemical ... evaporation, the glass substrates arecleaned in a bath containing acetone, ethanol and deionized water withultrasonic agitation for 5 min. The substrates are located in vacuumchamber and Sn metal ﬁlm...

Silicon nanowires grown on si(1 0 0) substrates via thermal reactions with carbon nanoparticles

... becompletely removed. On one hand it acts as abarrier for the direct interaction between hydro-carbons and Si and formation of SiC, and on theother hand, being exposed to ÔactiveÕ C containingspecies, ... processleading to nucleation of Si nanowires along the{1 1 1} plane walls. Disproportionation of Simonoxide seems to be the key reaction for theformation of Si nanowires by thermal evaporationof pure SiO ... Silicon nanowires grown on Si(1 0 0) substrates viathermal reactions with carbon nanoparticlesS. Bottia,*, R. Ciardia, R. Larcipreteb,c, A. Goldonib, L. Gregorattib,B....

Highly efficient and stable photoluminescence from silicon nanowires coated with sic

... pro-cess, hydrocarbon and hydrogen ions react with silicon oxide to form carbon oxide and silicon car-bide. The carbon oxide gas was pumped out while silicon carbide remained on the silicon nanowire.Fig. ... applica-tions in photophysics and device physics.SiNW were synthesized by thermal evapora-tion from a mixture of silicon and silicon dioxidepowder [14,15]. The SiNWs deposited on a silicon wafer ... Super-Diamond and Advanced Films (COSDAF),City University of Hong Kong, Hong Kong, People's Republic of ChinaReceived 23 June 2000AbstractA reaction of silicon nanowires (SiNW) with methane and...

A new mechanism for modulation of schottky barrier heights on silicon nanowires

... separate electron and hole injection. The sample conﬁguration, contact geometry and charge distribution are demonstrated in Fig. 5. Thepreparation started from an SOI wafer with a silicon ﬁlmthickness ... the semiconductor bulk. Using Eq. (1)in Poisson’s equation, and the materials parameters from Ref. [10] as mentioned in Fig. 2, the shape of theconduction band is demonstrated with and without ... creates a double donor in silicon with a groundstate for the ﬁrst capture d electron at an energy of about0.55 eV from the conduction band edge. Subsequently, thesecond electron is captured into...

Controlled growth of oriented amorphous silicon nanowires via a solid–liquid–solid (SLS) mechanism

... 2000AbstractHighly oriented amorphous silicon nanowires (a-SiNWs ) were grown on Si (1 1 1). The length and diameter of oriented SiNWs are almost uniform, which are 1 m and 25 nm, respectively. Dierent from ... with considerable Si concentration was eithersupplied from laser ablation of a powder target, ordirectly from silane. In this paper, we report that oriented a-SiNWs can be controllably grown on ... fast growth speed in the present condition.It was found that the growth of the amorphousSiNWs here is dierent from the VLS mechanismfor conventional whiskers [4–6], revealing a dier-ent growth...

One dimensional organic nanostructures a novel approach based on the selective adsorption of organic molecules on silicon nanowires

... chemisorption of speciﬁc molecules on silicon nanowires. STM data demonstrate thatdepending on the molecular functional groups, the molecules adsorb either randomly on the substrate orpreferentially on ... Surface Science LettersOne-dimensional organic nanostructures: A novel approach based on theselective adsorption of organic molecules on silicon nanowires Eric Salomon*, Antoine KahnDepartment ... the nanowires. In the latter case, chemisorption of suitable organic molecules on the nanowires leads to a well-deﬁned one-dimensional aggregation and changes the metallic character ofthe nanowires...

A simple route to annihilate defects in silicon nanowires

... Kowloon, Hong KongReceived 14 April 2000AbstractDefects inside silicon nanowires (SiNW) could be signi®cantly reduced by annealing the nanowires at 1100° C for 6h. High-resolution transmission ... in silicon nanowires Y.H. Tang, Y.F. Zheng, C.S. Lee, S.T. Lee*Center of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science,City University of Hong Kong, ... holds promise for nanoelectronic applica-tions. Ó 2000 Elsevier Science B.V. All rights reserved.1. Introduction Silicon nanowires (SiNW) have attracted muchattention since large scale synthesis...

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