Electrical conductivity measurement of silicon wire prepared by CVD

... effect of suchthin oxide ﬁlm on the electrical resistance measurement of SiNWshas not been clariﬁed.In the present work, the direct measurement of electrical resis-tance of a silicon nanowire ... Electrical conductivity measurement of silicon wire prepared by CVD Hiroshi Suzuki, Hiroshi Araki, Masahiro Tosa, Tetsuji Noda*National ... temperature.Fig. 7 is a schematic drawing of the electrical measurement of the SiNW covered with the silicon oxide layer. The total resistance,R, is the sum of those of SiNW and silicon oxide asR ¼ R1þ...

Mutagen Formation Potential of Composite Samples Prepared by Biodegradation of Agricultural Chemicals

... - 28 -Table 2 - Summary of the test results. In this study, mutagenicity and MFP were assessed by means of the net number of revertant colonies per unit of mass of the added ACs [net rev./mg-AC]. ... first measurement. The experiment results of MFP measurement of AC aqueous solutions without biodegradation tests and the test results of this study were compared. Fig. 8 shows an example of ... MFP measurement of composite samples to the present examination required by the law. It is therefore valid, based upon the results attained by the above manner, to discuss the significance of...

Temperature dependence of morphology and diameter of silicon nanowires synthesized by laser ablation

... oxideexceeded the growth rate of crystal silicon, outerlayer of silicon oxide will surround the crystal sil-icon. As a result, the growth of crystal silicon ceased and silicon oxide of outer layer coalescedtogether ... Thepeculiar feature of the branch suggests that theremay exist a competitive growth between crystal silicon core and outer layer of silicon oxide. Whenthe forming rate of outer layer of silicon oxideexceeded ... layer of the tip), as shown in Fig. 4. FromFig. 3. HRTEM image of the interface between the crystal silicon and amorphous silicon oxides,along the axis of thebranch of the octopus-shaped wires.The...

Dimensional evolution of silicon nanowires synthesized by au–si island catalyzed chemical vapor deposition

... (2007) 153–157Dimensional evolution of silicon nanowires synthesized by Au–Si island-catalyzed chemical vapor depositionD.W. Kwak, H.Y. Cho, W C. YangÃDepartment of Physics and Quantum-Functional ... transformation of the liquid intoAu–Si alloy droplet structures, whose shape is determined by minimization of the surface and interface energy of theliquid/substrate. Also, the composition of the Au–Si ... tips of the NWs seem to beAu–Si droplets in Fig. 1(d). The diameters of the NWs aresimilar to those of the Au–Si droplets. The existence of acritical Au ﬁlm thickness for initiation of NW...

Photoluminescence of silicon nanowires obtained by epitaxial chemical vapor deposition

... 20 0-nm-thick silicon oninsulator thin ﬁlms [8–10].Simulation of the emission spectrum of an ehp by a convolu-tion product of the density of states of the carriers affected by theFermi–Dirac ... 2008PACS:71.35.Ee78.55.Ae78.67.ÀnKeywords:Nanowires Silicon PhotoluminescenceExcitonElectron-hole-plasmaabstractWe have carried out photoluminescence measurements of silicon nanowires (SiNWs) obtained by thechemical ... densities of states are calculated for a three-dimensionalsystem. The temperature-dependent expression of the gap energyARTICLE IN P RESSFig. 1. MEB images of the nanowires obtained by a CVD method....

Sulfide assisted growth of silicon nano wires by thermal evaporation of sulfur powders

... surfaceoxidation of nanowires. This suggests that thenanowires were composed of silicon and silicon oxide as sheath. Actually, some SiNWs could beoxidized to be silicon oxide nanowires because of the ... produced on p-type (1 1 1) silicon wafers with a resistivity of about 0.001 O cm by means of a low-vacuum CVD system. First,several pieces of silicon wafers and plenty of sulfurpowders were placed ... form silicon sulﬁdes by the reaction with silicon, canalso be used to assist the growth of SiNWs. Inprinciple, all of silicon compounds, such as silicon sulﬁde shown in this paper and silicon...

Temperature-Controlled Growth of Silicon-Based Nanostructures by Thermal Evaporation of SiO Powders

... length of the Si core is only one-third to one-half of the entire length of the wire, and the rest of the wire is pure amorphous silicon oxide.We also investigated the cross section of the hard ... amorphous silicon oxide sheath (for thick wire) or anamorphous silicon oxide wire (for thin wire) . The formed solidSiO2component can retard the lateral growth of the nanowiresto ensure that the wires ... nanowires formed in zone III in yellow also consist of a crystalline Si tip and a wire composed of either amorphous silicon oxide (for the thin wires) or a Si core sheathed withamorphous silicon...

structural and electrochromic properties of tungsten oxide prepared by surfactant-assisted process

... properties of tungsten oxide prepared by surfactant-assisted processYuzhi ZhangÃ, Jiaguo Yuan, Jun Le, Lixin Song, Xingfang HuThe Key Laboratory of Inorganic Coating Materials, Shanghai Institute of ... Cu-Karadiation. The surfacemorphology of tungsten oxides thin ﬁlm was examined by a ﬁeld-emission scanning electron microscope of a JEOL JSM-670 0F. Thethickness measurements of the ﬁlms studied in this ... 3c of sample D calcined at ahigh temperature of 400 1C, the former morphology of sample Cchanged rimous and rough. Such surface mophology of sample Dcould be due to the agglomerated growth of...

synthesis and characterization of wo3 nanostructures prepared by an aged-hydrothermal method

... conditions and the deposition of tungsten oxide from a tungsten foil heated in the presence of oxygen [10], by heating a tungsten filament in a partialoxygen atmosphere [11], by reacting WO(OMe)4under ... temperature by using ammonium metatung-state as tungsten source and without the presence of additives.2. Experimental2.1. Synthesis of WO3NanostructuresWO3nanostructures were synthesized by using ... to the formation of nanostructures in a wide range of thicknesses, most of which had shown an irregular shape.The oxygen (O) and tungsten (W) atomic contents weredetermined by Energy Dispersive...

Growth kinetics of silicon nanowires by platinum assisted vapour–liquid–solid mechanism

... image of Si nanowire using Au. (d) HRTEM image of Si nanowire using Pt. Both were single crystal. (e) EDS line mapping of Sinanowires using Au catalyst. (f) EDS line mapping of Si nanowires ... growthkinetics of Si nanowires fabricated with Pt via the VLS mecha-nism, and compared the results with those for nanowires fabri-cated with Au.2. Experimental Silicon nanowires were fabricated by the ... degrade the performance of Sinanowire devices even if it diffuses into the nanowires. Somestudies have reported on the growth of Si nanowires using Ptwith a precursor of SiH4or SiCl4[4–6]....

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