Electrical conductivity measurement of silicon wire prepared by CVD
... effect of such thin oxide film on the electrical resistance measurement of SiNWs has not been clarified. In the present work, the direct measurement of electrical resis- tance of a silicon nanowire ... Electrical conductivity measurement of silicon wire prepared by CVD Hiroshi Suzuki, Hiroshi Araki, Masahiro Tosa, Tetsuji Noda * National ... temperature. Fig....
Ngày tải lên: 16/03/2014, 15:05
... - 28 - Table 2 - Summary of the test results. In this study, mutagenicity and MFP were assessed by means of the net number of revertant colonies per unit of mass of the added ACs [net rev./mg-AC]. ... first measurement. The experiment results of MFP measurement of AC aqueous solutions without biodegradation tests and the test results of this study were compared...
Ngày tải lên: 05/09/2013, 09:38
... oxide exceeded the growth rate of crystal silicon, outer layer of silicon oxide will surround the crystal sil- icon. As a result, the growth of crystal silicon ceased and silicon oxide of outer layer coalesced together ... The peculiar feature of the branch suggests that there may exist a competitive growth between crystal silicon core and outer layer of silicon oxide....
Ngày tải lên: 16/03/2014, 15:09
Dimensional evolution of silicon nanowires synthesized by au–si island catalyzed chemical vapor deposition
... (2007) 153–157 Dimensional evolution of silicon nanowires synthesized by Au–Si island-catalyzed chemical vapor deposition D.W. Kwak, H.Y. Cho, W C. Yang à Department of Physics and Quantum-Functional ... transformation of the liquid into Au–Si alloy droplet structures, whose shape is determined by minimization of the surface and interface energy of the liquid/substrate. Also,...
Ngày tải lên: 16/03/2014, 15:15
Photoluminescence of silicon nanowires obtained by epitaxial chemical vapor deposition
... 20 0-nm-thick silicon on insulator thin films [8–10]. Simulation of the emission spectrum of an ehp by a convolu- tion product of the density of states of the carriers affected by the Fermi–Dirac ... 2008 PACS: 71.35.Ee 78.55.Ae 78.67.Àn Keywords: Nanowires Silicon Photoluminescence Exciton Electron-hole-plasma abstract We have carried out photoluminescence measurements of...
Ngày tải lên: 16/03/2014, 15:19
Sulfide assisted growth of silicon nano wires by thermal evaporation of sulfur powders
... surface oxidation of nanowires. This suggests that the nanowires were composed of silicon and silicon oxide as sheath. Actually, some SiNWs could be oxidized to be silicon oxide nanowires because of the ... produced on p-type (1 1 1) silicon wafers with a resistivity of about 0.001 O cm by means of a low-vacuum CVD system. First, several pieces of silicon wafers and...
Ngày tải lên: 16/03/2014, 15:21
Temperature-Controlled Growth of Silicon-Based Nanostructures by Thermal Evaporation of SiO Powders
... length of the Si core is only one-third to one-half of the entire length of the wire, and the rest of the wire is pure amorphous silicon oxide. We also investigated the cross section of the hard ... amorphous silicon oxide sheath (for thick wire) or an amorphous silicon oxide wire (for thin wire) . The formed solid SiO 2 component can retard the lateral growth of the...
Ngày tải lên: 16/03/2014, 15:30
structural and electrochromic properties of tungsten oxide prepared by surfactant-assisted process
... properties of tungsten oxide prepared by surfactant-assisted process Yuzhi Zhang à , Jiaguo Yuan, Jun Le, Lixin Song, Xingfang Hu The Key Laboratory of Inorganic Coating Materials, Shanghai Institute of ... Cu-K a radiation. The surface morphology of tungsten oxides thin film was examined by a field- emission scanning electron microscope of a JEOL JSM-670 0F. The thickness measu...
Ngày tải lên: 20/03/2014, 13:08
synthesis and characterization of wo3 nanostructures prepared by an aged-hydrothermal method
... conditions and the deposition of tungsten oxide from a tungsten foil heated in the presence of oxygen [10], by heating a tungsten filament in a partial oxygen atmosphere [11], by reacting WO(OMe) 4 under ... temperature by using ammonium metatung- state as tungsten source and without the presence of additives. 2. Experimental 2.1. Synthesis of WO 3 Nanostructures WO 3 nanostruct...
Ngày tải lên: 20/03/2014, 13:08
Growth kinetics of silicon nanowires by platinum assisted vapour–liquid–solid mechanism
... image of Si nanowire using Au. (d) HRTEM image of Si nanowire using Pt. Both were single crystal. (e) EDS line mapping of Si nanowires using Au catalyst. (f) EDS line mapping of Si nanowires ... growth kinetics of Si nanowires fabricated with Pt via the VLS mecha- nism, and compared the results with those for nanowires fabri- cated with Au. 2. Experimental Silicon nanowires were f...
Ngày tải lên: 16/03/2014, 15:05